The Study of Purity Improvement on Tl-1223 Thin Films by DC Sputtering and Post-annealing Method

Gao, Xiaoxin; Xie, Wei; Wang, Zhenhua; Zhao, Xinjie; He, Ming; Zhang, X.; Yan, S.L.; Lu, Jianghua

doi:10.1007/s10948-014-2514-3

J Supercond Nov Magn

2014

DOI: 10.1007/s10948-014-2514-3

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The Study of Purity Improvement on Tl-1223 Thin Films by DC Sputtering and Post-annealing Method

Xiaoxin Gao

Wei Xie

Zhenhua Wang

et al.

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Cited by 4 publications

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“…In our previous works, [13] by adjusting the Tl ratio in sputtering targets, Tl 2 Ba 2 Ca 2 Cu 3 O 10 (Tl-2223) phase could be firstly formed, then it could be converted into the Tl-1223 phase in the further annealing process with selected Tl-based pellets. A key advantage of this method is that Tl-1212 and Tl-2212 phases are suppressed in the preparation of Tl-1223 films.…”

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confidence: 99%

Growth of TlBa₂Ca₂Cu₃O₉ Epitaxial Thin Films by Two-Step Method in Argon*

Xing

Wang²,

Gao

et al. 2019

Chinese Phys. Lett.

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TlBa2Ca2Cu3O9 (Tl-1223) films have promising applications due to their high critical temperature and strong magnetic flux pinning. Nevertheless, the preparation of pure phase Tl-1223 film is still a challenge. We successfully fabricate Tl-1223 thin films on LaAlO3 (001) substrates using dc magnetic sputtering and a post annealing two-step method in argon atmosphere. The crystallization temperature of Tl-1223 films in argon is reduced by 100°C compared to that in oxygen. This greatly reduces the volatilization of Tl and improves the surface morphology of films. The lower annealing temperature can effectively improve the repeatability of the Tl-1223 film preparation. In addition, pure Tl-1223 phase can be obtained in a broad temperature zone, from 790°C to 830°C. In our study, the films show homogenous and dense surface morphology using the presented method. The best critical temperature of Tl-1223 films is characterized to be 110 K, and the critical current J c (77 K, 0 T) is up to 2.13 × 106 A/cm2.

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mentioning

confidence: 99%

Growth of TlBa₂Ca₂Cu₃O₉ Epitaxial Thin Films by Two-Step Method in Argon*

Xing

Wang²,

Gao

et al. 2019

Chinese Phys. Lett.

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Excess conductivity analyses of (Cu0.5Tl0.5)Ba2Ca3Cu4O12−δ thin film samples synthesized at different temperatures and post-annealed in flowing nitrogen atmosphere

Khan

Safeer

Khan

et al. 2017

J Mater Sci: Mater Electron

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Controllable growth and magneto-resistivity investigations on Tl-1223 superconducting films with high T

Liang

Niu

et al. 2023

Ceramics International

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The Study of Purity Improvement on Tl-1223 Thin Films by DC Sputtering and Post-annealing Method

Cited by 4 publications

References 17 publications

Growth of TlBa₂Ca₂Cu₃O₉ Epitaxial Thin Films by Two-Step Method in Argon*

Growth of TlBa₂Ca₂Cu₃O₉ Epitaxial Thin Films by Two-Step Method in Argon*

Excess conductivity analyses of (Cu0.5Tl0.5)Ba2Ca3Cu4O12−δ thin film samples synthesized at different temperatures and post-annealed in flowing nitrogen atmosphere

Controllable growth and magneto-resistivity investigations on Tl-1223 superconducting films with high T

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The Study of Purity Improvement on Tl-1223 Thin Films by DC Sputtering and Post-annealing Method

Cited by 4 publications

References 17 publications

Growth of TlBa2Ca2Cu3O9 Epitaxial Thin Films by Two-Step Method in Argon*

Growth of TlBa2Ca2Cu3O9 Epitaxial Thin Films by Two-Step Method in Argon*

Excess conductivity analyses of (Cu0.5Tl0.5)Ba2Ca3Cu4O12−δ thin film samples synthesized at different temperatures and post-annealed in flowing nitrogen atmosphere

Controllable growth and magneto-resistivity investigations on Tl-1223 superconducting films with high T

Contact Info

Product

Resources

About

Growth of TlBa₂Ca₂Cu₃O₉ Epitaxial Thin Films by Two-Step Method in Argon*

Growth of TlBa₂Ca₂Cu₃O₉ Epitaxial Thin Films by Two-Step Method in Argon*