The super-Schottky diode at 30 GHz

McColl, M.; Bottjer, M.F.; Chase, A. B.; Pedersen, R.J.S.; Silver, A. H.; Tucker, J. R.

doi:10.1109/tmag.1979.1060108

Cited by 15 publications

(8 citation statements)

References 13 publications

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“…In their study, Pembridge and Stedman showed that the nitrous acid-catalyzed reaction between hydroxylamine and nitric acid actually generates nitrous acid when the nitric acid concentration exceeds 2.8114. The characteristics of their system are very similar to those observed in our system, leading further support to our suggestion that reactions [1]- [5] are very important in the etching kinetics of InAs by nitric: acid.…”

Section: Resultssupporting

confidence: 88%

“…This can readily react with nitric acid to regenerate twice the original quantity of NO2 by Eq. [4] and [5] HNOz + HNO3 ~ N~O4 + H20 [4] N204 ~ 2NO2 [5] which involves only two reactants and is therefore likely to occur easily. The overall reaction is described by Eq.…”

Section: Resultsmentioning

confidence: 99%

“…Perubridge and Stedman (15) have postulated that the active oxidizing agent, N204, is formed relatively slowly in dilute HNO3 because the nitrate ion is a weak nucleophile (Eq. [5]). This can provide a rate-liraiting process for the autocatalytic reaction.…”

Section: Resultsmentioning

confidence: 99%

“…The III-V compound semiconductors are materials with high potential for application in photoelectronic devices (1)(2)(3)(4), but their successful development is directly related to the ability to control the surface and interface properties (5). Wet etching and electrochemical oxidation are wellknown processes for first removing the native oxide then depositing an insulating layer on these chemically cleaned surfaces.…”

mentioning

confidence: 99%

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A Comparison of the Electrochemical Behavior of Illuminated n ‐ InAs and Other III–V Semiconductors in Concentrated Nitric Acid

Hsieh

Yeh

Shih

1992

J. Electrochem. Soc.

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The reaction kinetics of illuminated normaln‐normalInAs etched in nitric acid have been studied. Nitrogen dioxide was observed to evolve when the test sample was immersed in the acid solution. The dissolution rates of normalInAs , determined by the inductively coupled plasma (ICP) technique, were high. The nitrogen dioxide evolution reaction is believed to be an autocatalytic process which is followed by nucleophilic attack of the normalInAs electrode in which the surface oxides are etched away. Nitrite is an essential catalyst for the reaction and is also involved in the formation of an indium complex. The possible role of the energy levels at the normalsemiconductor/HNO3 interface are discussed in an attempt to explain the widely different reactivities of the four III–V semiconductors normalInP , normalGaAs , normalGaP , and normalInAs . The very much higher dissolution rate of normalInAs was discussed in terms of (i) the adequate overlap of the distribution function of the oxidizing agent (nitrate) with the normalInAs valence band, and (ii) the energetic instability of the electrons in the In‒As bonding orbitals. In contrast, the opposite is true in the case of the other III–V materials. In the latter materials, electron transfer can occur across the semiconductor/electrolyte interface only via low density surface states within the bandgap.

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Section: Resultssupporting

confidence: 88%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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A Comparison of the Electrochemical Behavior of Illuminated n ‐ InAs and Other III–V Semiconductors in Concentrated Nitric Acid

Hsieh

Yeh

Shih

1992

J. Electrochem. Soc.

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“…The differential conductance of HTS super‐Schottky diode is shown in Figure D. These devices have very low turn‐on voltage, extraordinarily low noise performance, and a high degree of nonlinearity, which enable high‐sensitivity microwave and video signal detection as well as microwave mixing …”

Section: Recent Progress In Applications Of Hts and Their Integrationmentioning

confidence: 99%

Thin‐Film‐Based Integrated High‐Transition‐Temperature Superconductor Devices

Balasubramanian

Xing

Strugo

et al. 2019

Adv Funct Materials

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Since the discovery of superconductivity at temperatures above the technologically promising liquid nitrogen temperatures, applications based on superconductors have expanded and are being put to commercial use. However, superconductivity at higher temperatures typically occurs in complex materials requiring stringent material and environmental constraints. Such restraints make the realization and integration of these materials with normal materials a nontrivial aspect. In this progress report, unique features of these superconductors in terms of their synthesis, physical properties determining interface electrical transport, and their applications are discussed. A detailed progress report on these applications with remarks on efforts taken to integrate these devices with traditional platforms and semiconducting materials is provided.

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Some speculations on the etching mechanism of (100) n-GaP and n-InP in HCl solutions

Hsieh

Shih

1992

Materials Chemistry and Physics

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The super-Schottky diode at 30 GHz

Cited by 15 publications

References 13 publications

A Comparison of the Electrochemical Behavior of Illuminated n ‐ InAs and Other III–V Semiconductors in Concentrated Nitric Acid

A Comparison of the Electrochemical Behavior of Illuminated n ‐ InAs and Other III–V Semiconductors in Concentrated Nitric Acid

Thin‐Film‐Based Integrated High‐Transition‐Temperature Superconductor Devices

Some speculations on the etching mechanism of (100) n-GaP and n-InP in HCl solutions

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