The Superior Response and High Reproducibility of the Memristor-Integrated Low-Power Transparent SnO₂ Gas Sensor

Abstract

We present a SnO2 gas sensor with an HfO2 layer that exhibits enhanced performance and reliability for gasistor applications, combining a gas sensor and a memristor. The transparent SnO2 gasistor with a 30 nm HfO2 layer demonstrated low forming voltages (7.1 V) and a high response rate of 81.28% to 50 ppm of NO2 gas, representing an approximately 174.86% increase compared to the response of 29.58% from the SnO2 gas sensor without the HfO2 layer. The device also showed improved power efficiency and exceptional long-term stability, with reproducibility tests over 10 days at 10 ppm NO2 showing a minimal variation of 2.4%. These results indicate that the proposed transparent memristor with the 30 nm HfO2 layer significantly enhances the device’s reliability and effectiveness for gasistor applications.