The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique

Orak, İkram; Koçyiğit, Adem; Türüt, A.

doi:10.1016/j.jallcom.2016.08.295

Cited by 90 publications

(20 citation statements)

References 36 publications

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“…We have also detected an intense peak at ∼69°belonging to p-Si(1 0 0). It is in agreement with literature study [45]. Grain sizes of GaN thin films have been calculated by Scherrer relation [46]:…”

Section: Structural Analysissupporting

confidence: 90%

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Mantarcı

Kundakçı

2019

Materials Science-Poland

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GaN thin films were deposited on p-Si(1 0 0) substrates using RF magnetron sputtering at various RF powers. Influence of RF power on morphological, optical and structural properties of GaN thin films were investigated and presented in detail. XRD results proved that the films were polycrystalline in structure with (1 0 0) and (1 1 0) planes of hexagonal GaN. It was found that increasing RF power led to deterioration of crystal structure of the films due to increased decomposition of GaN. Stress in GaN thin films was calculated from XRD measurements and the reasons for this stress were discussed. Furthermore, it was analyzed and interpreted whether the experimental measurement results support each other. E 2 (high) optical phonon mode of hexagonal GaN was obtained from the analysis of Raman results. UV-Vis spectroscopy results showed that optical band gap of the films varied by changing RF power. The reasons of this variation were discussed. AFM study of the surfaces of the GaN thin films showed that some of them were grown in Stranski-Krastanov mode and others were grown in Frank-Van der Merwe mode. AFM measurements revealed almost homogeneous, nanostructured, low-roughness surface of the GaN thin films. SEM analysis evidenced agglomerations in some regions of surface of the films and their possible causes have been discussed. It has been inferred that morphological, optical, structural properties of GaN thin film can be changed by controlling RF power, making them a potential candidate for LED, solar cell, diode applications.

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Section: Structural Analysissupporting

confidence: 90%

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Mantarcı

Kundakçı

2019

Materials Science-Poland

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“…[31][32][33] Two R s values are used for proof of the consistency for Cheung's functions. 34 each other and confirmed the consistency of the Cheung technique. However, there are slightly differences for n and U b values between Cheung and thermionic emission theory depending on approximation differences.…”

Section: Cuco 2 S 4 May Cause a Barrier Between The Al And P-supporting

confidence: 71%

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

Yıldırım

Koçyiğit

Sarılmaz

et al. 2019

Journal of Elec Materi

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Ternary-structured thiospinels have attracted great attention in recent years for energy applications due to their attractive characteristics such as simple production, earth-abundant components and non-toxic nature. In this work, copper cobalt sulfide (CuCo 2 S 4 or carrollite) thiospinel nanocrystals were synthesized by a hot-injection method, and detailed electrical and optoelectronic characterizations were performed in a Schottky device. The synthesized nanocrystals were used as an interfacial layer between the Au metal and p-Si semiconductor to obtain an Au/CuCo 2 S 4 /p-Si device. The structural and morphological characterizations confirmed the crystallinity, nanostructure and composition of the CuCo 2 S 4 nanocrystals. The I-V and C-V measurements were employed to characterize the Au/CuCo 2 S 4 /p-Si device for various illumination intensities. The obtained device exhibited good rectifying and photodiode properties as well as good photocapacitance. The Au/CuCo 2 S 4 /p-Si device can be used and improved for optoelectronic applications.

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“…Most of the metal oxides have homogeneous and/or filamentary characteristics and exhibit RS memristive behavior [9,15,16]. In recent decades, amongst these oxide-based materials, ZnO has become increasingly popular for use in memristor-based devices [17,18] owing to its distinctive properties [19,20].…”

Section: Introductionmentioning

confidence: 99%

ZnO and ZnO1−x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior

Gül

Efeoǧlu

2017

Ceramics International

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In this study, direct-current reactive sputtered ZnO and ZnO1-x based thin film (30 nm and 300 nm in thickness) memristor devices were produced and the effects of oxygen vacancies and thickness on the memristive characteristics were investigated. The oxygen deficiency of the ZnO1-x structure was confirmed by SIMS analyses. The memristive characteristics of both the ZnO and ZnO1-x devices were determined by time dependent current-voltage (I-V-t) measurements. The distinctive pinched hysteresis I-V loops of memristors were observed in all the fabricated devices. The typical homogeneous interface and filamentary types of memristive behaviors were compared. In addition, conduction mechanisms, on/off ratios and the compliance current were analyzed. The 30 nm ZnO based devices with native oxygen vacancies showed the best on/off ratio. All of the devices exhibited dominant Schottky emissions and weaker Poole-Frenkel conduction mechanisms. Results suggested that the oxygen deficiency was responsible for the Schottky emission mechanism. Moreover, the compliance currents of the devices were related to the decreasing power consumption as the oxygen vacancies increased.

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The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique

Cited by 90 publications

References 36 publications

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

ZnO and ZnO1−x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior

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