The switching mechanisms in amorphous chalcogenide memory devices

Steventon, A.G.

doi:10.1016/0022-3093(76)90024-7

Cited by 10 publications

(4 citation statements)

References 8 publications

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“…Indeed, ChGs-despite their amorphous structure that lacks long-range orderare p-type semiconductors, unlike all IR glasses described in the previous sections that are electrical insulators [230]. Furthermore, ChGs exhibit threshold and memory-switching phenomena [231] not known to exist in other glass systems. Consequently, besides their utility in IR fibers, ChGs have been exploited recently in fabricating waveguide devices for MIR sensing [70,232,233], nonlinear optics [234,235], integrated photonics [71,236], laser amplifiers [237,238], and ultrahigh-bandwidth optical signal processing [239,240].…”

Section: Chalcogenide Glass Infrared Fibersmentioning

confidence: 93%

Infrared fibers

et al. 2015

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Infrared (IR) fibers offer a versatile approach to guiding and manipulating light in the IR spectrum, which is becoming increasingly more prominent in a variety of scientific disciplines and technological applications. Despite well-established efforts on the fabrication of IR fibers in past decades, a number of remarkable breakthroughs have recently rejuvenated the field-just as related areas in IR optical technology are reaching maturation. In this review, we describe both the history and recent developments in the design and fabrication of IR fibers, including IR glass and single-crystal fibers, multimaterial fibers, and fibers that exploit the transparency window of traditional crystalline semiconductors. This interdisciplinary review will be of interest to researchers in optics and photonics, materials science, and electrical engineering.

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Section: Chalcogenide Glass Infrared Fibersmentioning

confidence: 93%

Infrared fibers

et al. 2015

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“…In the case of an applied electric field, a current filament sets up through the phase change medium. 62,63 Joule heating within this filament causes the local temperature to rise rapidly. If this temperature exceeds the melting or crystallization temperature of the phase change material and the material is subsequently quenched, the heated region switches to the amorphous or crystalline phase.…”

Section: Phase Transition Mechanismsmentioning

confidence: 99%

Thermal Transport in Phase Change Memory Materials

Bozorg-Grayeli

Reifenberg

Asheghi

et al. 2013

Annual Rev Heat Transfer

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Phase change memory uses brief pulses of electrical current to induce phase transitions in chalcogenide material regions with dimensions near or even far below 50 nm. The strongly differing electrical conductivities of the crystalline and amorphous phases allow data storage at densities in excess of terabits per square inch. Nanoscale conduction heat transfer governs the figures of merit in these devices, which include the energy and time required for switching, and has received much attention through both measurements and simulations over the last two decades. This chapter reviews the recent progress on thermal conduction phenomena relevant for phase change memory, including a summary of the physical mechanisms involved as well as the most useful simulation and measurement techniques. Experimental work has focused on separating the intrinsic and boundary resistances of thin film phase change materials, as well as the individual contributions of electrons and phonons to the effective conductivity of the hexagonal crystalline phase. Simulations have focused on improving device geometries and switching characteristics, and continue to need improvements in the areas of crystallization modeling and the impact of phase distribution on electrical and thermal transport. Future research requires a more detailed understanding of electron-phonon coupling and its impact on electrical and thermal conduction in the crystalline phase, as well as greater insight into thermoelectric transport and its impact on device behavior. This progress will be critical for the development of innovative memory strategies including multibit storage.

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“…While the response of electrons to the applied high field is used to explain threshold switching, an additional thermally induced transition to the crystalline state in the electrode region explains memory switching in chalcogenide glasses [4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%