The Synergistic Effect of N[sub 2]/H[sub 2] Gases in the Plasma Passivation of Siloxane-Based Low-k Polymer Films

Chen, S. T.; Chen, G. S.; Yang, Tzong Jer; Chang, T. C.; Yang, Wan Suk

doi:10.1149/1.1525550

Cited by 13 publications

(11 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The modeling of plasmas in the processing reactor could be used to design a new reactor for the new material processing.The modeling of plasma could be used to explain the problems occurring in the processing, for example, the RIE-Lag effect, over/under etching, charging damage, and so on [4]. Manuscript There have been many efforts to establish the etching technology for the low-k materials with different gas plasma [2], [5]- [10]. Currently, N -H or NH plasma is considered to be the promising candidate fot the etching of low-k materials [8]- [11].…”

mentioning

confidence: 99%

“…Currently, N -H or NH plasma is considered to be the promising candidate fot the etching of low-k materials [8]- [11]. N -H gas is more appropriate than NH for practical application because it is nontoxic, easy to process, and permits independent control over the partial pressure of each of the individual N -H gases [10]. There have been many research results of N , H , and N -H plasmas, but numerical investigation of N -H plasma for low-pressure capacitively coupled plasma (CCP) system has not been executed so far.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Modeling of N<tex>$_2$</tex>–H<tex>$_2$</tex>Capacitively Coupled Plasma for Low-k Material Etching

Shon

Makabe

2004

IEEE Trans. Plasma Sci.

View full text Add to dashboard Cite

As the scale of semiconductors shrinks and the interconnect layer develops to tens level, the resistance-capacitance (RC) delay of signals through interconnection materials becomes a big obstacle for high-speed operation of integrated circuits. In order to reduce the RC delay, low-k materials will be used for intermetal dielectric (IMD) materials. As a result, new etching conditions must be developed to match the material properties. We present the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with N 2 -H 2 gas mixture, which is known as a promising one for organic low-k materials etching. We have developed a self-consistent simulation tool which includes neutralspecies transport model, based on the relaxation continuum (RCT) model. Not only the plasma transport and spatial distribution, but also those of neutrals are important issues for the etching process. For the etching of low-k materials by N 2 -H 2 plasma, N and H atoms have a big influence on the materials. Moreover, the distributions of excited neutral species influence the plasma density and profile. Therefore, we include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species until a spatiotemporal steady-state profile could be obtained. In the simulation of neutral species, the interactions of excited states and vibrational levels of both N 2 and H 2 molecules are considered too. The profiles of periodic steady-state plasma and neutrals species in the 2f-CCP system is discussed.Index Terms-H 2 -N 2 plasma, low-material etching, plasma etching, relaxation continuum (RCT) modeling, two-frequency capacitively coupled plasma (2 -CCP).

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Modeling of N<tex>$_2$</tex>–H<tex>$_2$</tex>Capacitively Coupled Plasma for Low-k Material Etching

Shon

Makabe

2004

IEEE Trans. Plasma Sci.

View full text Add to dashboard Cite

show abstract

“…According to this work, the overcharge agents mainly include: 1) organometallic ferrocene derivatives; 2) dihydrophenazine systems; [159] 3) metallocene and dimethoxybenzene derivatives; [160] 4) thiantlurene derivatives; 5) 2, 5-di-tertbutyl-1,4-dimethoxybenzene (DDB) derivatives; [161] 6) 2,2,6,6-tetramethylpiperinyl-oxide (TEMPO) and its derivatives; [162,163] 7) triphenylamine derivatives; [164] 8) lithium borate cluster salt, Li 12 B 12 H 12−x F x . [165,166] Detailed discussions of redox shuttle agents can also be found in several excellent references. [120,153,154] As a smart component, the redox shuttle agents provide reversible self-protection to LIBs, but there are still a few challenges for the development of redox shuttle agents.…”

Section: Wwwadvancedsciencenewscom Wwwsmall-methodscommentioning

confidence: 99%

Smart Materials and Design toward Safe and Durable Lithium Ion Batteries

et al. 2019

View full text Add to dashboard Cite

Smart electrochemical energy storage devices are devices that can operate autonomously to some extent. Although the conventional electrochemical energy storage devices, e.g., the commonly used lithium‐ion batteries (LIBs), may be externally monitored in terms of their voltage and current output to reflect the state of health for the devices, it is extremely important to exploit materials and devices that are intrinsically smart enough to be capable of rapidly self‐detecting and responding to faults, such as interior short circuits, overheating, abnormal capacity drop, and other types of mechanical/chemical damage. These “smart” features could significantly enhance the safety characteristics and durability of LIBs, which is essential for future usage. Therefore, recent achievements toward smart materials and design strategies for safer and more durable LIBs are summarized. The main categories are as follows: 1) New materials: This category mainly includes smart electrode materials with thermal/electrical/mechanical self‐response functions, and self‐response separators to suppress thermal runaway/lithium dendrite growth; 2) New chemistries: This category mainly includes electrolytes with reversible self‐protecting functions; and 3) New architectures with novel functions, such as shape‐recovery, self‐heating, and self‐monitoring. Besides the working mechanisms, the challenges that must be overcome for smart LIBs to be adopted in practical applications are also discussed.

show abstract

“…When the samples were left in the sample boxes, these samples were not exposed to any chemicals, nor were they in direct contact with any other surfaces. Several previous studies have been conducted to study the effect of various gas plasmas on the properties of low-κ and ULK films [183][184][185][186][187][188][189][190][191][192][193][194][195][196][197][198][199][200][201]. It has been reported that oxygen plasma that is typically used in a photoresist stripping process, increases the κ value of 'carbon containing' low-κ materials due to carbon depletion after plasma processing [183].…”

Section: Contaminationmentioning

confidence: 99%

“…Researchers used a combined small angle x-ray scattering and specular x-ray reflectivity technique to characterize the mass density profile and pore size of a P-MSQ ULK material after subjecting it to an oxygen plasma treatment with significant ion bombardment. The results showed that a thin densified layer is formed rapidly at the surface region of the film been proposed to minimize the increase of the dielectric constant [186][187][188][189][190]. Alternatively, it is proposed to use a reducing plasma such as H 2 /N 2 and H 2 /He for photoresist stripping to avoid carbon depletion [191][192][193][194][195].…”

Section: Contaminationmentioning

confidence: 99%

High frequency electrical properties of copper interconnects patterned by resolution enhanced lithography

Kumar¹

View full text Add to dashboard Cite

Signal integrity problems associated with on-chip interconnects have become very significant with increase in device integration and circuit frequency. Copper and low-κ dielectric materials are used to improve electrical performance of interconnects for integrated circuits. At radio and microwave frequencies, the signal propagation behaviour of on-chip interconnects are complex to analyze and predict especially for lossy lowresistivity silicon substrates. Interconnects behave as transmission lines, and signal delay, transients, crosstalk and power dissipation become critical. In addition, integration of mesoporous dielectrics and scaling of feature size has made the patterning and processing of damascene interconnects far more challenging than initially anticipated. The fabrication, high-frequency characterization and modeling of copper interconnects are the objectives of this thesis. This work is divided into two parts. First, the fabrication of deep submicron (100-250 nm) copper interconnects with porous ultra low-κ dielectrics in a damascene process is addressed. Resolution enhanced optical lithography is used to pattern copper interconnects in a step and scan system with a 248 nm excimer laser source. A mask with alternating phase shifted sub-resolution assist features is designed to enhance the resolution and process latitude of the lithography process. The spurious reflections associated with deep ultraviolet exposure of transparent film stacks and resist poisoning effects are systematically studied and solutions demonstrated. In addition, the effects of plasma processing on the structure, composition and electrical properties of an ultra low-κ dielectric and the microstructure of barrier layer deposited on it are investigated.

show abstract

The Synergistic Effect of N[sub 2]/H[sub 2] Gases in the Plasma Passivation of Siloxane-Based Low-k Polymer Films

Cited by 13 publications

References 15 publications

Modeling of N<tex>$_2$</tex>–H<tex>$_2$</tex>Capacitively Coupled Plasma for Low-k Material Etching

Modeling of N<tex>$_2$</tex>–H<tex>$_2$</tex>Capacitively Coupled Plasma for Low-k Material Etching

Smart Materials and Design toward Safe and Durable Lithium Ion Batteries

High frequency electrical properties of copper interconnects patterned by resolution enhanced lithography

Contact Info

Product

Resources

About

The Synergistic Effect of N[sub 2]/H[sub 2] Gases in the Plasma Passivation of Siloxane-Based Low-k Polymer Films

Cited by 13 publications

References 15 publications

Modeling of N&lt;tex&gt;$_2$&lt;/tex&gt;–H&lt;tex&gt;$_2$&lt;/tex&gt;Capacitively Coupled Plasma for Low-k Material Etching

Modeling of N&lt;tex&gt;$_2$&lt;/tex&gt;–H&lt;tex&gt;$_2$&lt;/tex&gt;Capacitively Coupled Plasma for Low-k Material Etching

Smart Materials and Design toward Safe and Durable Lithium Ion Batteries

High frequency electrical properties of copper interconnects patterned by resolution enhanced lithography

Contact Info

Product

Resources

About

Modeling of N<tex>$_2$</tex>–H<tex>$_2$</tex>Capacitively Coupled Plasma for Low-k Material Etching

Modeling of N<tex>$_2$</tex>–H<tex>$_2$</tex>Capacitively Coupled Plasma for Low-k Material Etching