Interface defects are one of the
main factors for inefficient photoelectric
conversion of nanocomposites, which is also suitable for the photocatalytic
nanosystem containing photosensitizers and co-catalysts, so the efficient
passivation of interface defects can enhance their photocatalytic
performance. In this work, P-doped C3N4 (P–C3N4) was prepared by the thermal polymerization
of urea with phytic acid as the P doping source. Then, the doped P
atoms could act as anchoring sites for photodeposited Ni nanoparticles
(NPs) on P–C3N4, and Ni–P–N
bonds were spontaneously formed between Ni NPs and P–C3N4 with doped P as the bridging ligand. The optimal
H2 evolution rate of P–C3N4/Ni-20 is 1.56 mmol g–1 h–1,
which is 52.0 and 6.0 times that of C3N4 and
C3N4/Ni-30, respectively, and even 2.0 times
that of P–C3N4/Pt-2%. Its apparent quantum
efficiency of 4.35% at 420 nm was 6.9 times that of reference C3N4/Ni-30 without P doping. The optimized interface
transfer of carriers by the formed Ni–P–N bonds between
P–C3N4 and Ni NPs was the main factor
for the enhanced photocatalytic performance of C3N4.