1980
DOI: 10.1016/0026-2714(80)90211-5
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The temperature dependence of component failure rate

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1983
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Cited by 29 publications
(7 citation statements)
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“…Figure 2 shows the decreasing influence of junction temperature on failure rate as the temperature is decreased. This behavior has led one investigator to conclude: 28 ...in most components there is a leveling off of failure rate to an extent that further reduction in temperature has little or no beneficial effect on failure rate.…”
Section: Avionic Failure As a Processmentioning
confidence: 93%
“…Figure 2 shows the decreasing influence of junction temperature on failure rate as the temperature is decreased. This behavior has led one investigator to conclude: 28 ...in most components there is a leveling off of failure rate to an extent that further reduction in temperature has little or no beneficial effect on failure rate.…”
Section: Avionic Failure As a Processmentioning
confidence: 93%
“…McPherson [14] discussed the reasons why OAeV is not always correct. Blanks [5] compares the Eyring, Arrhenius and Mountsinger models and includes some reported activation energies for component bum-in. For hybrid microelectronic devices, he suggests activation energies between 0.35eV and OA5eVup to 150 DC.…”
Section: Algorithm To Set Tjlmentioning
confidence: 99%
“…In each iteration of. "pattern" search (a pattern is a set of the combination of xt.xl, and x' which is abbreviated as X), we set tJ,L to tij,L at the beginning and subsequently reset it by the following algorithm: Mountsinger and Eyring models are also used by some analysts (Stitch et al, [16]; Blanks, [5]) to model the relation between accelerated life testing and burn-in time. But, as pointed out by Kuo and Kuo [13], Blanks [5], and Stitch et al [16], the temperature dependence of failure rate makes it difficult to determine the activation energy (Ea).…”
Section: Algorithm To Set Tjlmentioning
confidence: 99%
“…Using the composite (apparent) activation energy E a comprehending a mixture of failure mechar isms for the plastic encapsulated transistors, we can obtain the acceleration factor /, for temperature, (5) where k is the Boltzmann's constant, T, and T o are the stress and device operating temperature, respectively. For £"=0.5 eV [3], the acceleration factor computed from Eq. (5) is 10.4.…”
mentioning
confidence: 99%