The temperature dependence of degradation mechanisms in long-lived (GaAl)As DH lasers

Ritchie, S.; Godfrey, R. F.; Wakefield, Bonnie J.; Newman, D. H.

doi:10.1063/1.325305

Cited by 38 publications

(10 citation statements)

References 13 publications

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“…Also the dark lines in Fig. 3(b) are attributed to strain originating in the dark regions on the lasing stripe and do not represent additional features outside the stripe (Ritchie et al, 1978). Of particular interest is the observation that the diagonal row of dark spots in Fig.…”

Section: (C) Degradation Of Long-lived Lasersmentioning

confidence: 94%

“…Devices examined after degradation were conventiona. oxide isolated stripegeometry lasers and have been described fully earlier (Ritchie et al, 1978;Goodwin et al, 1975).…”

Section: Methodsmentioning

confidence: 99%

“…In Fig. 3(b) an image recorded using photoluminescence as described earlier (Ritchie et al, 1978), clearly indicates the position of the stripe. In Fig.…”

Section: (C) Degradation Of Long-lived Lasersmentioning

confidence: 99%

“…As the stabler devices last for many thousands of hours many degradation studies involve attempts to accelerate the process by heating to 363 K or even 383 K (Furukawa et al, 1977). A recent example of these studies (Ritchie et al, 1978) discussed some of the problems associated with thermal stressing and provided photoluminescent images showing some heterogeneity in the lasing stripe after degradation at 363 K. We report here the use of EBIC to map the near junction regions and provide a much more detailed picture of the heterogeneity occurring in degraded long life lasers.…”

Section: (C) Degradation Of Long-lived Lasersmentioning

confidence: 99%

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EBIC microscopy of double‐heterostructure laser materials and devices

Stevenson¹,

Skeats²,

Heckingbottom³

1980

Journal of Microscopy

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The electron beam induced current (EBIC) mode of the scanning electron microscope (SEM) has been used to characterize double heterostructure laser materials and devices in GaAs/Gal-,Al,As. Scanning the electron probe across the cleaved face of the laser structure shows that displacement of the p n junction with respect to the heterojunctions is not uncommon with displacements -1 pm occurring. Concurrent measurement of the minority carrier diffusion length gives very short lengths of 0.3-0.4 pm, differing from those in much thicker layers. Scanning the electron probe in the contact plane indicates clearly that long-lived lasers exhibit marked heterogeneity during degradation. Considerable complexity and variation is recorded depending upon the fabrication details and degradation conditions adopted. I N T R O D U C T I O NThe fabrication, operation and degradation of GaAs/Gal-,Al,As double heterostructure (DH) lasers continue to attract world-wide interest. Despite this, due mainly to the inherent complexity of the four layer device, there has been surprisingly little metallurgical and microscopical examination of the lasers. We report here how the electron beam induced current (EBIC) mode of the SEM can be used to provide information on (a) p-n junction displacement in fabrication, (b) minority carrier diffusion lengths for modelling of device operation, and (c) heterogeneity and complexity in the degradation of long-lived lasers.

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Section: (C) Degradation Of Long-lived Lasersmentioning

confidence: 94%

“…Devices examined after degradation were conventiona. oxide isolated stripegeometry lasers and have been described fully earlier (Ritchie et al, 1978;Goodwin et al, 1975).…”

Section: Methodsmentioning

confidence: 99%

“…In Fig. 3(b) an image recorded using photoluminescence as described earlier (Ritchie et al, 1978), clearly indicates the position of the stripe. In Fig.…”

Section: (C) Degradation Of Long-lived Lasersmentioning

confidence: 99%

Section: (C) Degradation Of Long-lived Lasersmentioning

confidence: 99%

See 2 more Smart Citations

EBIC microscopy of double‐heterostructure laser materials and devices

Stevenson¹,

Skeats²,

Heckingbottom³

1980

Journal of Microscopy

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show abstract

“…To compensate for the temperature effect, it is necessary to ençloy circuitry which automatically adjusts the driving current. At present, this leads to a shorter device life time at higher operating temperature [7,8].…”

mentioning

confidence: 99%

Effect of nonuniformity in temperature distribution on the performance of a stripe-geometry double-heterostructure laser

Lee

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Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

Nash

Joyce

Hartman

et al. 1985

At&T Technical Journal

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We are concerned with assuring the reliability of semiconductor lasers intended for an application in which the design lifetime is long, replacement or redundancy is impossible or impractical, and the failure of even a few lasers could be disastrous. In the search for a reliability assurance strategy that will meet our objectives, we have carefully examined the well-known and widely used bathtub and lognormal approaches. Based upon our understanding of the expected aging behavior of lasers, we propose an alternative reliability assur ance strategy that we believe to be an improvement over the traditional approaches. The object is not how to make reliable lasers, but rather how to confidently predict, in a timely fashion, which lasers in a given population will endure beyond the intended system lifetime. Particular emphasis is placed upon initially imposed overstress regimes that address the anticipated presence of transient modes of degradation and infant failure modes with low thermal activation energies that may be invulnerable to detection during accelerated thermal aging. Since lasers degrade gradually rather than fail suddenly, comparable emphasis is placed upon monitoring the stabilized long-term degradation rates of the survivors of the overstress regimes so as to permit lifetime predictions of individual lasers.

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The temperature dependence of degradation mechanisms in long-lived (GaAl)As DH lasers

Cited by 38 publications

References 13 publications

EBIC microscopy of double‐heterostructure laser materials and devices

EBIC microscopy of double‐heterostructure laser materials and devices

Effect of nonuniformity in temperature distribution on the performance of a stripe-geometry double-heterostructure laser

Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

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