The temperature dependence of resistivity in thin metal films

Marom, H.; Eizenberg, M.

doi:10.1063/1.1784552

Cited by 23 publications

(13 citation statements)

References 13 publications

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“…For all films, almost a constant difference between the resistivities in the two temperatures was measured. This is in agreement with our theoretical prediction as for the dependence of resistivity on temperature for thin films, 14 predicting approximately a FIG. 6.…”

Section: Resultssupporting

confidence: 91%

Size-dependent resistivity of nanometric copper wires

2006

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Higher electrical resistivity is observed in metals when dimensions approach the mean free path of the electrons. The effects of electron scattering at surfaces and at grain boundaries are then becoming substantial. This issue has been extensively studied on thin films but rarely on wires, where both small dimensions ͑width and height͒ influence the resistivity increase. In this study, copper wires having variable width and height down to 100 nm are investigated. An alternative approach is suggested in which the resistivity of such wires at different temperatures is compared to that of films having thickness that is equal to the height of the wires. The main outcome is a reliable model that overcomes the well-known difficulty of separating the contribution of surfaces to the resistivity from that of grain boundaries. It is shown that when both width and height of the wire are larger than one third of the mean free path, its resistivity exhibits a filmlike behavior with a separate contribution to the resistivity of each small dimension. The scattering of electrons at the surfaces of the investigated wires was best described by a zero specularity parameter, indicating the importance of this effect for the resistivity increase in small wires.

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Section: Resultssupporting

confidence: 91%

Size-dependent resistivity of nanometric copper wires

2006

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“…26,27) An additional scattering rate comes from scattering at the film surfaces, although the grain-boundary scattering is usually larger. [28][29][30][31][32][33][34] Neglecting the latter, and taking the phonon scattering rate from " 2 in handbooks, using v F =r as the grain boundary scattering rate needed to fit the data gives 40 nm for r, the average grain radius, rather close to estimates from SEM images of the film in Fig. 1.…”

Section: Measurement Of Dielectric Functionsupporting

confidence: 58%

Study of Positive and Negative Refraction of Visible Light at the Cu/Air Interface

et al. 2011

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Light transmission at the Cu/air interface was measured in the visible region for a series of wedge-shaped Cu film samples. It is found that light refraction at the Cu/air interface changes from negative in the Drude region, passing through zero at about E g , to positive in the interband-transition region. Detailed discussion is given to exclude those mechanisms which have been arguably assigned as the cause of negative refraction at a metal/dielectric interface. Based on the spectra of the measured refractive index and modeled in the Drude region, the positive and negative refraction analyzed in this work are qualitatively in agreement with dispersion of the group refractive index, and may aid in understanding light transmission at the metal/dielectric interface as characterized by the law of refraction.

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“…When changes in resistivity due to grain growth become small and the microstructure of the layer is stabilized, heating stops and the film undergoes natural cooling to room temperature (3). Resistivity decrease in this part is only due to effect of temperature, in accordance with the expected changes in resistivity predicted for thin metallic films [7]. In the next stage (4) a layer of a chosen material (tantalum in this case) is deposited, causing an abrupt change in resistivity due to the creation of a new interface.…”

Section: Resultsmentioning

confidence: 53%

<B>In-Situ Characterizarion of Interfaces-Induced Resistivity in Nanometric Dimensions</B>

Marom

Eizenberg

2006

MRS Proc.

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To improve the speed of integrated circuits it is highly important to minimize the electrical resistivity of their interconnects. However, as the dimensions of the interconnects approach the mean free path of the electrons, a substantial rise in resistivity occurs due to additional electron scatterings from grain boundaries and interfaces. To investigate the role of interfaces, in-situ resistivity measurements were preformed for thin copper films on which different materials were deposited. The resistivity was monitored before and after the deposition, enabling to observe the changes as a new top interface was created. Among the materials tested, tantalum resulted in the highest resistivity increase. This fact is of special importance since this material and its nitride serve today as the common diffusion barrier for copper metallization. Titanium resulted in a smaller resistivity increase, but still higher than that of a free copper surface in vacuum. The developed approach enables to test the influence of different diffusion barriers on copper resistivity. With the continuously shrinking dimensions of copper interconnects, this factor will have an increasing importance in future technology nodes.

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The temperature dependence of resistivity in thin metal films

Cited by 23 publications

References 13 publications

Size-dependent resistivity of nanometric copper wires

Size-dependent resistivity of nanometric copper wires

Study of Positive and Negative Refraction of Visible Light at the Cu/Air Interface

<B>In-Situ Characterizarion of Interfaces-Induced Resistivity in Nanometric Dimensions</B>

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