The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE

Yıldız, Abdullah; Kasap, M.

doi:10.1063/1.3416681

Cited by 4 publications

(3 citation statements)

References 26 publications

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“…[ 33 ] We can understand the scattering mechanism of the PEDOT:PSS–TFSA films by interpreting the exponent p , which is an index determining the T dependence of τ φ as τ φ ∝ T − p (Figure S10 , Supporting Information). [ 59 ] For electron–phonon scattering, p = 3, and for electron–electron scattering, p = 2 (clean limit) and p = 1.5 (dirty limit) are expected. As shown in Figure 3F , the samples show only a small decrease of the p values from 1.8 to 1.6 along with the de‐doping, but still the values are within the carrier–carrier scattering regime.…”

Section: Resultsmentioning

confidence: 99%

High Thermoelectric Performance in Solution‐Processed Semicrystalline PEDOT:PSS Films by Strong Acid–Base Treatment: Limitations and Potential

Park,

Jang,

Kang

et al. 2024

Advanced Science

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Thermoelectric (TE) generation with solution‐processable conducting polymers offers substantial potential in low‐temperature energy harvesting based on high tunability in materials, processes, and form‐factors. However, manipulating the TE and charge transport properties accompanies structural and energetic disorders, restricting the enhancement of thermoelectric power factor (PF). Here, solution‐based strong acid–base treatment techniques are introduced to modulate the doping level of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films with preserving its molecular orientation, enabling to achieve a remarkably high PF of 534.5 µW m−1 K−2. Interestingly, theoretical modeling suggested that further de‐doping can increase the PF beyond the experimental value. However, it is impossible to reach this value experimentally, even without any degradation of PEDOT crystallinity. Uncovering the underlying reason for the limitation, an analysis of the relationship among the microstructure–thermoelectric performance–charge transport property revealed that inter‐domain connectivity via tie‐chains and the resultant percolation for transport are crucial factors in achieving high TE performance, as in charge transport. It is believed that the methods and fundamental understandings in this work would contribute to the exploitation of conducting polymer‐based low‐temperature energy harvesting.

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Section: Resultsmentioning

confidence: 99%

High Thermoelectric Performance in Solution‐Processed Semicrystalline PEDOT:PSS Films by Strong Acid–Base Treatment: Limitations and Potential

Park,

Jang,

Kang

et al. 2024

Advanced Science

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“…We attempt to evaluate the maximum possible value of L i at 5 K by taking D ∼ 0.275 cm 2 s −1 for a single crystal of TiO 2 [18], which will have a higher value than any other sample of TiO 2 . τ i for TiO 2 is known to be ∼320 fs at 77 K [19], which would vary as T −P , where P is an index that depends on the nature of the scattering mechanism [20]. We estimate the value of L i using these values and it turns out that L i is ∼45 nm, which is much lower than the film thickness.…”

Section: Resultsmentioning

confidence: 99%

Implication of local moment at Ti and Fe sites for the electrical and magneto-transport properties of degenerate semiconducting Ti_1−xFe_xO_2−depitaxial films

Bapna

Choudhary

Pandey

et al. 2012

J. Phys.: Condens. Matter

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We have investigated the effect of local magnetic moment on the electrical and magneto-transport properties of thin films of the degenerate semiconductor Ti(1-x)Fe(x)O(2-d) (x = 0,0.04). The electrical measurements of these films reveal high temperature metallic behavior and resistivity minima. The behavior below the resistivity minimum temperature is ascribed to Kondo like scattering. The coupling between the local moment and the charge carriers is reflected in the magnetoresistance measurements in these films. This work indicates competition between the magnetic ordering mechanism by J(RKKY) and the moment screening mechanism by J(Kondo). Accordingly the role of carrier density in achieving the magnetic ordering in such materials either by defect engineering or by transition metal doping is discussed.

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“…Whatever the choice is, the inal equation remains the same. It may be noted that the imaginary potential term V i is a function of temperature [28,29] as the molecular vibrations or even chemical reaction rates can vary with temperature. So, it is possible to address the temperature variation by making V i as a function of temperature.…”

Section: ( )mentioning

confidence: 99%

A quantum mechanical model for hole transport through DNA: predicting conditions for oscillatory/non-oscillatory behavior

Sarwar¹,

Khan²,

Khan³

2020

Int J Phys Res Appl

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A quantum mechanical model that considers tunneling and inelastic scattering has been applied to explain the hole transfer reaction from a G (Guanine) base to a GGG base cluster through a barrier of Adenine bases, (A) n (n = 1-16). For n = 1, the ratio of tunneling to inelastic scattering is about 6, which is sharply decreased to around 0.23 and 5.23 × 10-8 for n = 4 and 16 respectively, suggesting dominance of inelastic scattering for n ≥ 4. As in experiment, the calculated product yield ratios (P GGG /P G) exhibit a strong distance dependence for n < 4, and a weak distance dependence for n ≥ 4. We also predict conditions under which oscillatory or nonoscillatory charge transfer (CT) yield are expected.

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The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE

Cited by 4 publications

References 26 publications

High Thermoelectric Performance in Solution‐Processed Semicrystalline PEDOT:PSS Films by Strong Acid–Base Treatment: Limitations and Potential

High Thermoelectric Performance in Solution‐Processed Semicrystalline PEDOT:PSS Films by Strong Acid–Base Treatment: Limitations and Potential

Implication of local moment at Ti and Fe sites for the electrical and magneto-transport properties of degenerate semiconducting Ti_1−xFe_xO_2−depitaxial films

A quantum mechanical model for hole transport through DNA: predicting conditions for oscillatory/non-oscillatory behavior

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The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE

Cited by 4 publications

References 26 publications

High Thermoelectric Performance in Solution‐Processed Semicrystalline PEDOT:PSS Films by Strong Acid–Base Treatment: Limitations and Potential

High Thermoelectric Performance in Solution‐Processed Semicrystalline PEDOT:PSS Films by Strong Acid–Base Treatment: Limitations and Potential

Implication of local moment at Ti and Fe sites for the electrical and magneto-transport properties of degenerate semiconducting Ti1−xFexO2−depitaxial films

A quantum mechanical model for hole transport through DNA: predicting conditions for oscillatory/non-oscillatory behavior

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Implication of local moment at Ti and Fe sites for the electrical and magneto-transport properties of degenerate semiconducting Ti_1−xFe_xO_2−depitaxial films