The Temperature Dependence of the Density of States in Semiconductors

Abstract

The temperature dependence of the density of energy states in semiconductors is considered. With the help of mathematical modeling of the thermal broadening of the energy levels, the temperature dependence of the band gap of semiconductors is studied. In view of the non-parabolic and the temperature dependence of the effective mass of the density of states in the allowed bands, graphs of temperature dependence of the band gap are obtained. The theoretical results of mathematical modeling are compared with experimental data for Si, InAs and solid solutions of p-Bi 2−x Sb x Te 3−y Se y. The theoretical results satisfactorily explain the experimental results for Si and InAs. The new approach is investigated by the temperature dependence of the band gap of semiconductors.

Temperature Dependence of the Density of States and the Change in the Band Gap in Semiconductors

“…A mathematical model of the density spectrum of states was constructed in [4,5,6]. With the help of which, the temperature dependence of discrete energy levels in the forbidden zone of silicon was analyzed.…”

Simulation of the Temperature Dependence of the Density of States in a Strong Magnetic Field

“…Moreover, the coefficient of expansion is the energy density of states, which does not account for thermal broadening of the levels. At absolute zero, GN-function turns into the Dirac delta function [5]- [7]. When the temperature tends to absolute zero density of states turn to the expansion coefficients in a series of GN-functions.…”

“…In [5], it was shown that the continuous spectrum defined at room temperature, are formed by the thermal broadening of the number of discrete levels in the band gap. Thermal broadening of the energy states of the conduction band and valence band gap of the semiconductor explains the temperature dependence of the band gap of the semiconductor [6].…”

“…The temperature dependence of the density of states due to thermal broadening of discrete energy states [4]- [7]. Thermal broadening can be described by the temperature dependence of the occupation probabilities of the energy levels.…”

“…[4]- [7] calculated the temperature dependence of the density of states defined by relaxation spectroscopy of the energy levels in semiconductors. It is shown that due to the thermal broadening of the levels of a discrete spectrum with hanging temperature turns into a continuous energy spectrum.…”