1997
DOI: 10.1063/1.365664
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The temperature dependence of the transient current in ferroelectric Pb(ZrxTi1−x)O3 thin films for memory devices applications

Abstract: Articles you may be interested in ( Na 0.5 Bi 0.5 ) 0.87 Pb 0.13 Ti O 3 thin films on different substrates for ferroelectric memory applications

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Cited by 9 publications
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References 22 publications
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