The temperature dependence of the amplification factor of bipolar-junction transistors

Dillard, W.C.; Jaeger, R.C.

doi:10.1109/t-ed.1987.22896

Cited by 24 publications

(9 citation statements)

References 4 publications

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“…In modern CMOS processes, as the silicon impurity doping concentration becomes particularly high (>10 18 cm −3 ), the silicon bandgap narrowing (BGN) occurs [14]. For BJT, due to the BGN induced by the silicon lattice deformation in the heavily doped emitter, its forward current gain becomes strongly temperature dependent [10], which is described by (3) in the Gummel-Poon model…”

Section: A Bandgap Narrowing In Bjtmentioning

confidence: 99%

A Precision CMOS Voltage Reference Exploiting Silicon Bandgap Narrowing Effect

Wang

Law²,

Bermak

2015

IEEE Trans. Electron Devices

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A compact voltage-mode bandgap voltage reference (BGR) is presented. Instead of using overhead circuits, the silicon bandgap narrowing effect is exploited for bipolar junction transistor's (BJT) curvature reduction and residual curvature correction. Prototype measurements in a 0.18-µm standard CMOS process show that the curvature of the BJT is effectively reduced from its inherent 3.6 mV to 1.4 mV. The proposed BGR measures a minimum temperature coefficient of 8.7 ppm/°C from −55°C to 125°C by batch trimming one resistor. After a curvature trimming, it further improves to 4.1 ppm/°C. The BGR has a minimum supply voltage of 1.3 V, 4.3 µA nominal current consumption, 0.03%/V line sensitivity, and 2 mV/mA load sensitivity at 25°C. The output rms noise in the 0.1∼10-Hz band measures 10.23 µV. Index Terms-Bandgap narrowing (BGN), bipolar junction transistor (BJT) curvature reduction, BJT noise, CMOS bandgap voltage reference (BGR), curvature correction, process spread, temperature coefficient (TC).

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Section: A Bandgap Narrowing In Bjtmentioning

confidence: 99%

A Precision CMOS Voltage Reference Exploiting Silicon Bandgap Narrowing Effect

Wang

Law²,

Bermak

2015

IEEE Trans. Electron Devices

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“…The temperature dependency of b is an exponential function of temperature, which can be expressed as [8]:…”

Section: A New Curvature Compensation Technique For a New Structurementioning

confidence: 99%

A 0.52 ppm/°C high-order temperature-compensated voltage reference

Liu

Luo

et al. 2009

Analog Integr Circ Sig Process

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This paper proposed a new high-order curvature compensation technique for a new bandgap voltage reference structure using the temperature characteristics of current gain b and emitter bandgap narrowing factor DE G of a lateral NPN bipolar transistor. The new structure can produce two voltage references, which are 1.209 and 2.418 V, respectively. The simulation results show that the temperature coefficients of the two output voltage are 0.52 ppm/°C, the PSRR is more than 60 dB for frequencies at 10 kHz, and the circuit dissipates 0.18 mW with 5-V supply.

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“…It can be expressed as [8]: the technique in [7]. Fig.3 shows the characteristic of the (1) variable with some values of AEG that we need in my design.…”

Section: A New Curvature Compensation Techniquementioning

confidence: 99%

“…In [7], AEG is about 63.9mev. In [8], the vertical n-p-n transistor can be approximated by (1) with A EG=24mev. The temperature-dependence characteristic of the proposed variable T/ =(T/ 1 c) X exp(AEG /(KT)) with different AEG, when the temperature is changed from 233k to 393k, is shown in Fig.2.…”

Section: The Circuit Implementation Of the Proposed Techniquementioning

confidence: 99%

A Novel Curvature Compensation Technique for High Precision Voltage Reference

Liu

Feng

Zeng

et al. 2006

2006 International Conference on Communications, Circuits and Systems

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This paper proposed a new curvature compensation approach for a kind of bandgap voltage reference using the temperature characteristics of the current gain P and the bandgap narrowing factor AEG of emitter of a bipolar transistor. This technique requires no additional circuits for the curvature compensation. This paper designed two bandgap references that the output voltages are 1.207v and 2.419v, respectively and the temperature coefficients are 0.73 ppm/°C and 0.65 ppm/0C, respectively. These circuits dissipate about 0.09mW with a 3-V supply and 0.18mW with a 5-V supply, respectively.

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The temperature dependence of the amplification factor of bipolar-junction transistors

Cited by 24 publications

References 4 publications

A Precision CMOS Voltage Reference Exploiting Silicon Bandgap Narrowing Effect

A Precision CMOS Voltage Reference Exploiting Silicon Bandgap Narrowing Effect

A 0.52 ppm/°C high-order temperature-compensated voltage reference

A Novel Curvature Compensation Technique for High Precision Voltage Reference

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