The terahertz emission and photoelectron spectroscopy study of CuInS₂ thin films

Abstract

CuInS 2 thin films were produced by a two-stage process by means of the sulfurisation of magnetron-sputtered metallic precursor layers on molybdenum-covered soda-lime glass substrates. Terahertz pulse generation from the surface of CuInS 2 thin films excited by femtosecond laser pulses was studied. Terahertz radiation efficiency is dependent on the stoichiometry of the films obtained. The interface formation between vacuumevaporated CdS and CuInS 2 thin films was studied by photoelectron spectroscopy using synchrotron radiation. The valence band offset of 0.7 ± 0.1 eV was determined for the CdS/CuInS 2 heterojunction.