The ternary quantum-dot cell and ternary logic

Abstract

Abstract. Quantum-Dot Cellular Automata (QCAs) are becoming more and more one of the most promising candidates for the alternative processing platform of the future. Since their advent in the early 1990s the required technological processes, as well as the QCA structures that implement the basic and functionally complete set of binary logic functions, have been developed. This article, however, presents an extension of the (standard) binary quantum-dot cell that is focused on the enrichment of the cell's processing capabilities. It is shown that the newly introduced ternary quantum-dot cell can be used to represent three logic values and that only minor modifications of the corresponding binary QCA structures are required to implement the functionally complete set of Lukasiewicz ternary logic functions. Submitted to: NanotechnologyThe ternary quantum-dot cell and ternary logic 2

A novel ternary quantum-dot cell for solving majority voter gate problem

“…All the ternary QCA basic elements function remains the same as in the case of eight-dot cell except majority gate's function which works faster and uses less area. Bajec et al (2006), the wiring area is ignored…”

“…For the first time, Lebar Bajec et al (2006) extended the binary QCA that was proposed by Lent. The new model has four additional quantum-dots that makes this model suitable for implementing multi-value logic.…”

“…With this limitation only four arrangements out of 28 possible states can be selected. The cells' centers are chosen to be separated by r = 110 nm, because the ratio between the maximum interdot distance in a cell and the inter-cell distance must be kept the same as in the bQCA cell (Lebar Bajec et al 2006). …”

“…The design is implemented in two layers as shown in Fig. 8; two majority-like gates make the partial products and the other one produces the final result (Lebar Bajec et al 2006).…”

“…In the last term r i,j stands for the distance between sites i and j and V Q is the Coulomb coupling strength. For the GaAs/AlGaAs material system with uniform dielectric constant of 11.9, V Q is 120.9 meV (Lebar Bajec et al 2006). So this term evaluates the mutual Coulomb interaction of electrons localized at different sites.…”