The thermal and electrical properties of CoMo alloys as copper adhesion/barrier layers

Wang, Jing-Xuan; Xu, Wen-Zhong; Chen, Fei; Lu, Hai-Sheng; Xu, Zhong; Qu, Xin-Ping

doi:10.1109/icsict.2012.6467672

Cited by 6 publications

(4 citation statements)

References 2 publications

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“…The SMA acts like a glue to adhere silica on the Mo surface. The final reaction can be written as: [32][33][34][35][36][37] SiO 2 + 12MoO 3 + 2H 2 O = H 4 SiMo 12 O 40 [8] It has been reported that, when Mo oxide was dispersed onto silica surface in the ambient with water vapor, silicomolybdic acid could form and the forming time was decided by the Mo loading. 30,[34][35][36] In our case, in the CMP process, the formed MoO 3 due to oxidation of Mo in the H 2 O 2 based slurry would react with silica in the aqueous solution to form the silicomolybdic acid.…”

Section: Inhibition Mechanism Of Colloidal Silica On Cmp Of Momentioning

confidence: 99%

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Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries

Yang

et al. 2017

ECS J. Solid State Sci. Technol.

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Chemical mechanical polishing (CMP) of molybdenum (Mo) using H2O2 based slurry with colloidal silica as abrasives has been systematically investigated. Effects of pH values, abrasives and additive of the slurry on CMP of Mo were investigated respectively. Results show that by adding ammonium sulfate (AS) in the alkaline H2O2 based slurry, both static etch rate (SER) and removal rate (RR) of Mo became much greater than without adding AS because of formation of a highly soluble (NH4)2MoO4. It is found that colloidal silica abrasive particles could adsorb on the Mo surface and have inhibitory effect on corrosion and polishing of Mo, and the higher concentration of colloidal silica particles, the lower SER and RR. AS addition in the slurry would enhance this phenomenon. Raman measurement results show that, silicomolybdic acid could form on the Mo surface in the slurry because of reaction between Moly oxide and silica particles, which causes the adsorption and inhibition of Mo etching and polishing.

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Section: Inhibition Mechanism Of Colloidal Silica On Cmp Of Momentioning

confidence: 99%

“…Our lab has also reported excellent diffusion barrier properties of MoTa alloy 7 and single layer CoMo alloy. 8,9 The electrochemical behavior of Mo has been studied extensively. 10 As is well known, Mo is corrosion resistant due to formation of a passive layer on its surface in aqueous environments.…”

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Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries

Yang

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Sputtered Mo (5 nm)/WN (5 nm) bi-layer remained thermally stable up to at least 775 ⁰C [13]. Our previous study on Mo based barrier also showed that CoMo alloy [14], MoTa alloy and Mo/TaN stack [15] could be good diffusion barrier to Cu. Mo (5 nm)/TaN (5 nm) can be thermally stable up to 600⁰C annealing [11], and the adding of Co or Ta to form alloys results in better barrier performance against Cu diffusion [10,11].…”

Section: Introductionmentioning

confidence: 72%

Study of direct Cu electrodeposition on ultra-thin Mo for copper interconnect

Xu¹,

Cao²,

Yang³

et al. 2016

Microelectronic Engineering

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Direct electrodeposition (ECD) process of copper film on ultra-thin molybdenum film is investigated in both copper sulfate-sulfuric acid (CuSO 4-H 2 SO 4) acidic bath and copper sulfate-ethylenediamine (CuSO 4-En) neutral bath (pH = 7.5). The neutral electrolyte containing 0.03 M CuSO 4 and 0.06 M En was chosen to avoid excessive corrosion of Mo and introduction of other ions. The complexing effect of En affects the electrodeposition process of Cu on Mo. Potentiodynamic polarization curves and scanning electron microscopic characterization show that Cu can be electroplated in CuSO 4-En bath with lower corrosion rate, greater nucleation density and shorter fully-covering time than that in CuSO 4-H 2 SO 4 bath. The fitting results of current-time transients using Scharifker and Hill's model support the instantaneous nucleation and growth of Cu on Mo in both CuSO 4-H 2 SO 4 bath and CuSO 4-En bath (with background electrolyte) at the initial stage of electrodeposition. By using an optimized two-step plating process (at the current density of 8 mA/cm 2 in the first step for a short time and 4 mA/cm 2 in the second step), the resistivity of direct ECD Cu on Mo was almost the same to that of ECD Cu on Cu/Mo in the same plating bath.

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“…Results show that 3-nm-thick PVD Co 1 Mo 3 single layer can withstand annealing at 400 • C for at least 30 min on ULK (Ultra Low-k) dielectric and the TDDB (time-dependent dielectric breakdown) properties can be comparable to that of Ta/TaN. 10,13 The capability of direct electroplating of Cu on CoMo has also been originally demonstrated. 10,14 Different from electrochemical growth of Cu on a Cu seed layer, Cu electroplated on a foreign substrate proceeds nucleation and island growth before Cu coalescence to a continuous film.…”

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Effect of Co_xMo_yas Single Barrier Layer on Properties of Directly Electroplated Copper Films

Wang

Yang

et al. 2016

J. Electrochem. Soc.

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In this study, resistivity, texture and self-annealing behaviors of directly electroplated copper films on Co x Mo y liner/barrier layers were systematically studied. Cu with lower resistivity, lower resistance drop caused by self-annealing and stronger (111) texture can be electroplated on Co compared with CoMo layers and Mo. This phenomenon can be explained by the different nucleation densities of Cu on liner/barrier during the initial process of electrodeposition (ECD). Comparison was also made between Cu films electroplated on Co x Mo y and Cu seed layer/Co x Mo y . It is found that texture of direct-ECD Cu was closely related to nucleation density, while texture of ECD Cu on Cu/Co x Mo y was affected by texture inheritance from Cu seed to ECD Cu films.

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The thermal and electrical properties of CoMo alloys as copper adhesion/barrier layers

Cited by 6 publications

References 2 publications

Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries

Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries

Study of direct Cu electrodeposition on ultra-thin Mo for copper interconnect

Effect of Co_xMo_yas Single Barrier Layer on Properties of Directly Electroplated Copper Films

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The thermal and electrical properties of CoMo alloys as copper adhesion/barrier layers

Cited by 6 publications

References 2 publications

Chemical Mechanical Polishing of Mo Using H2O2as Oxidizer in Colloidal Silica Based Slurries

Chemical Mechanical Polishing of Mo Using H2O2as Oxidizer in Colloidal Silica Based Slurries

Study of direct Cu electrodeposition on ultra-thin Mo for copper interconnect

Effect of CoxMoyas Single Barrier Layer on Properties of Directly Electroplated Copper Films

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Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries

Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries

Effect of Co_xMo_yas Single Barrier Layer on Properties of Directly Electroplated Copper Films