The thermal chemistry of ammonia on Ni(110)

Chrysostomou, Demetrius; Flowers, J.; Zaera, Francisco

doi:10.1016/s0039-6028(99)00458-6

Cited by 58 publications

(54 citation statements)

References 32 publications

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“…16 The XPS data were taken by using the Al K α X-ray source (hν = 1486.6 e V), with a total resolution of approximately 1.0 eV. No evidence of X-ray damage was observed: similar results were obtained regardless of the time of exposure to the X-rays, and the same molecular desorption behavior was observed in TPD before versus after radiation.…”

Section: Methodsmentioning

confidence: 90%

Surface Chemistry of Copper(I) Acetamidinates in Connection with Atomic Layer Deposition (ALD) Processes

et al. 2011

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The thermal chemistry of copper(I)-N,N 0 -di-secbutylacetamidinate on Ni(110) single-crystal and cobalt polycrystalline surfaces was characterized under ultrahigh vacuum (UHV) conditions by X-ray photoelectron spectroscopy (XPS) and temperature-programmed desorption (TPD). A complex network of reactions were identified, starting with the dissociative adsorption of the precursor, from its dimeric form in its free state to a monomer once bonded to the nickel surface. The dissociation of a CÀN bond in the acetamidinate ligand at ∼200 K leads to the formation of adsorbed 2-butene and N-secbutylacetamidinate. Some of the latter intermediates hydrogenate around 300 K to release N-sec-butylacetamidine into the gas phase, while the remaining adsorbed species dissociate further around 400 K, as the copper atoms become reduced to a metallic state, possibly to form acetonitrile and a sec-butylamido surface species that reacts further at 485 K to release 2-butene. By 800 K, only copper and a small amount of carbon can be seen on the surface by XPS. The implications of this chemistry to the growth of metal films by atomic layer deposition (ALD) are discussed.

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Section: Methodsmentioning

confidence: 90%

Surface Chemistry of Copper(I) Acetamidinates in Connection with Atomic Layer Deposition (ALD) Processes

et al. 2011

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“…Studies of ammonia on nickel surfaces show that -NH x is formed on the surface together with atomic ÀN and ÀH. [38][39][40] Apart from the importance of the surface species (ÀOH or ÀNH x ) it has also been shown that ALD growth of copper from b-diketones and H 2 is selective on metallic surfaces. [41] The mechanism proposed in this case includes electron transfer from the surface to the metal-organic adsorbate, leading to the release of one or more ligands.…”

Section: Discussionmentioning

confidence: 99%

Gas‐Pulsed CVD for Film Growth in the CuNiN System

Lindahl

Ottosson

Carlsson

2012

Chemical Vapor Deposition

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A new ternary solid solution, Cu 3-x Ni xþy N, is prepared by gas-pulsed CVD at 260 8C. Gas pulses of the precursor mixtures Cu(hfac) 2 þ NH 3 and Ni(thd) 2 þ NH 3 , separated by intermittent ammonia pulses, are employed for the deposition of Cu 3 N and Ni 3 N, respectively. A few monolayers of the nitrides are grown in each CVD pulse and then mixed by diffusion to produce the solid solution. The metal content of the solid solution can be varied continuously from 100% to about 20% Cu, which means that the electrical properties can be varied from 1.6 eV (band gap of Cu 3 N) to metallic (Ni 3 N). This is of interest for various applications, e.g., solar energy, catalysis, and microelectronics.

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“…With increasing doses of NH 3 we noticed changes both in the work function values and in the signal at 15.8 eV. This signal has a preferentially 3d character even if the spectrum corresponds to the self-convolution of the SDOS.…”

Section: Resultsmentioning

confidence: 86%

“…15 -17 Figure 1(a) presents the NH 3 interaction on the Ni surface pretreated by 200 L of oxygen at 600 K. Ammonia exposure was up to 3000 L. During ammonia adsorption, each MIES spectrum in Fig. 1(a) was taken after a dose of 100 L of NH 3 . The spectrum corresponding to the first dose is very similar to the previous one in the absence of ammonia.…”

Section: Resultsmentioning

confidence: 99%

Interaction of NH₃ with oxygen‐pretreated Ni at 600 K

Lescop¹,

Fanjoux²,

Galtayries³

et al. 2002

Surface & Interface Analysis

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The aim of the present study was to investigate the reaction between ammonia and pre-adsorbed oxygen on Ni at 600 K using metastable impact electron spectroscopy (MIES) and UPS techniques. For a given oxygen-pretreated nickel surface, the changes in the MIES spectra along with ammonia adsorption can be decomposed into three different steps: a first domain without significant changes, a second domain corresponding to drastic changes in the intensity of a signal at 15.8 eV; and a third domain where no more change is detected. The first domain may correspond to the ammonia chemisorption on the surface, whereas the changes in the second domain would be attributed to surface dehydroxylation. The existence of NH x groups on the surface has been detected by UPS; they result from ammonia chemisorption. The changes in the MIES spectra have also been studied versus the initial oxygen uptake on Ni. It emerged that the first domain is larger with increasing initial oxygen exposure: this may be explained by the poorer surface reactivity of NiO, contrary to the oxygen-adsorbed phase.

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The thermal chemistry of ammonia on Ni(110)

Cited by 58 publications

References 32 publications

Surface Chemistry of Copper(I) Acetamidinates in Connection with Atomic Layer Deposition (ALD) Processes

Surface Chemistry of Copper(I) Acetamidinates in Connection with Atomic Layer Deposition (ALD) Processes

Gas‐Pulsed CVD for Film Growth in the CuNiN System

Interaction of NH₃ with oxygen‐pretreated Ni at 600 K

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The thermal chemistry of ammonia on Ni(110)

Cited by 58 publications

References 32 publications

Surface Chemistry of Copper(I) Acetamidinates in Connection with Atomic Layer Deposition (ALD) Processes

Surface Chemistry of Copper(I) Acetamidinates in Connection with Atomic Layer Deposition (ALD) Processes

Gas‐Pulsed CVD for Film Growth in the CuNiN System

Interaction of NH3 with oxygen‐pretreated Ni at 600 K

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Interaction of NH₃ with oxygen‐pretreated Ni at 600 K