2013
DOI: 10.1016/j.sse.2012.07.007
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The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique

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Cited by 22 publications
(2 citation statements)
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“…In addition, the thermal characteristic of 808nm laser array was studied, and it was pointed out that there was transverse thermal crosstalk between the luminescent elements [14] . The pulsed operation introduced thermal stress to the array bars, and it was pointed out that thermal stress cyclic fatigue is one of the main failure modes of high-power semiconductor laser arrays under high-power pulsed operating conditions [15] .…”
Section: Introductionmentioning
confidence: 99%
“…In addition, the thermal characteristic of 808nm laser array was studied, and it was pointed out that there was transverse thermal crosstalk between the luminescent elements [14] . The pulsed operation introduced thermal stress to the array bars, and it was pointed out that thermal stress cyclic fatigue is one of the main failure modes of high-power semiconductor laser arrays under high-power pulsed operating conditions [15] .…”
Section: Introductionmentioning
confidence: 99%
“…[15]. First of all, the LD is operated under a constant electrical power of 2 W for 600 s which was chosen to be enough long to a steady-state operation regime, then the LD was switched from the working state to measuring state to measure the forward voltage using an A/D data acquisition board under a sensor current (1.5 mA).…”
mentioning
confidence: 99%