The thermoelectric properties of In2O3 thin films deposited by direct current magnetron sputtering

Abstract

In 2 O 3 films were deposited on K9 glass by direct current magnetron sputtering with different oxygen partial pressure percentage. It is found that the films have a body-centered cubic structure, a relatively high transmission in the visible range and an optical band gap of around 3.75 eV. The conductivity of the films increases with the temperature increase up to around 470K due to the increase in the carrier concentration and then decreases due to scattering. The films are n-type and the absolute value of the Seebeck coefficient increases nearly linearly with the increase in the test temperature. The power factor of the films also roughly increases with the increase in the test temperature. It is found that oxygen partial pressure percentage has an effect on defects, electron density and Fermi level position. The films deposited with the oxygen partial pressure percentage of 80% have the best thermoelectric properties.