The thermoluminescence properties of CdS films under nitrogen atmosphere

Metin, H.; Erat, Selma; Emen, Fatih Mehmet; Kafadar, V. Emir; Yazici, A. Necmeddin; Matmon, Ari; Külcü, Nevzat

doi:10.1016/j.jlumin.2010.03.025

Cited by 10 publications

(7 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 2(b) shows the XRD patterns of the annealed CdS layers with only peaks for the hexagonal phase. Metin et al [34] reported a similar scenario of mixed cubic and hexagonal phases in CBD-CdS in which the cubic phase disappeared after annealing. A slight narrowing of the range of 2θ values for the four hexagonal phase peaks was also observed with all the (100) peaks occurring at a 2θ value of 24.7°, all the (002) peaks occurring at a 2θ value of 26.4°, the (101) peaks occurring at 2θ range of 28.0-28.1°, and the (110) peaks occurring at 2θ range of 43.5-43.6°.…”

Section: Resultsmentioning

confidence: 82%

Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage

Echendu

Dejene

Dharmadasa

et al. 2017

International Journal of Photoenergy

View full text Add to dashboard Cite

Electrochemical deposition and characterization of nanocrystallite-CdS thin films for thin film solar cell application are reported. The two-electrode system used provides a relatively simple and cost-effective approach for large-scale deposition of semiconductors for solar cell and other optoelectronic device application. Five CdS thin films were deposited for 45 minutes each at different cathodic deposition voltages in order to study their properties. X-ray diffraction study reveals that the as-deposited films contain mixed phases of hexagonal and cubic CdS crystallites with large amounts of internal strain and dislocation density. Postdeposition annealing results in phase transformation which leaves the films with only the hexagonal crystal phase and reduced strain and dislocation density while increasing the crystallite sizes from 21.0-42.0 nm to 31.2-63.0 nm. Photoelectrochemical cell study shows that all the CdS films have n-type electrical conductivity. Optical characterization reveals that all samples show similar transmittance and absorbance responses with the transmittance slightly increasing towards higher growth voltages. All the annealed films show energy bandgap of 2.42 eV. Scanning electron microscopy and energy dispersive X-ray analyses show that grains on the surface of the films tend to get cemented together after annealing with prior CdCl 2 treatment while all the films are S-rich.

show abstract

Section: Resultsmentioning

confidence: 82%

Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage

Echendu

Dejene

Dharmadasa

et al. 2017

International Journal of Photoenergy

View full text Add to dashboard Cite

show abstract

“…The above features indicate recrystallization and a phase transformation from mixed phase to stable hexagonal phase. The presence of mixed phases of cubic and hexagonal in CdS films and phase transformation were also observed before [19,21,24,30,31,35,37].…”

Section: A X-ray Diffractionmentioning

confidence: 73%

“…Among these deposition methods CBD is the most cost-effective and simple approach for depositing CdS thin films. The CdS thin films obtained by this method are uniform, adherent, and reproducible [23][24][25].…”

Section: Introductionmentioning

confidence: 94%

See 1 more Smart Citation

Structural Study of CdS Films Annealed in Oxidizing Atmosphere

Pantoja

Ibáñez

Acosta

et al. 2012

e-J. Surf. Sci. Nanotechnol.

View full text Add to dashboard Cite

Cadmium sulphide thin films were deposited onto glass substrates by chemical bath deposition (CBD) from a bath containing cadmium acetate, ammonium acetate, thiourea and ammonium hydroxide. The CdS films were annealed in air at various temperatures and time in order to investigate the influence of post-deposition annealing and CdCl2 treatments on the structure. The various structural parameters such as grain size, lattice constant, dislocation density and strain, were investigated using XRD. The as-deposited films have the mixed (cubic and hexagonal) phase. The grain size increases due to annealing and grain growth is a function of annealing temperature and time duration. In general the results showed that the strain, grain growth and the re-crystallization of CdS depends on the post-deposition annealing duration, temperatures and the presence of CdCl2.

show abstract

“…Thin films of CdS can be prepared by several methods, such as pulsed laser deposition , spray pyrolysis , magnetic sputtering , molecular beam epitaxy , chemical vapor deposition , chemical bath deposition (CBD) , thermal evaporation , and successive ionic layer adsorption and reaction technique . Among these methods, SILAR is found to be one of the inexpensive methods suitable for the production of uniform, adherent, and good quality reproducible large area thin films at low cost.…”

Section: Introductionmentioning

confidence: 99%

Realizing near stoichiometric and highly transparent CdS:Mo thin films by a low‐cost improved SILAR technique

Ravichandran¹,

Banu²,

Baneto

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

Undoped and molybdenum doped CdS thin films were deposited on glass substrates using Improved Successive Ionic Layer Adsorption and Reaction (ISILAR) technique. The Mo doping level was varied from 0 to 15 at.% in steps of 5 at.%. The XRD analysis shows that all the films are polycrystalline with cubic structure and grow preferentially along the (111) plane. The crystallite size increases gradually with the increase in Mo doping level up to 10 at.% and decreases with further doping. The morphological studies reveal that Mo doping significantly affects the grains size. Qualitative and quantitative compositional analysis show that near stoichiometric undoped and Mo doped CdS thin films can be achieved using this ISILAR technique. All the films exhibit high transparency in the visible region with an average transmittance in the range of 85–95%.

show abstract

The thermoluminescence properties of CdS films under nitrogen atmosphere

Cited by 10 publications

References 49 publications

Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage

Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage

Structural Study of CdS Films Annealed in Oxidizing Atmosphere

Realizing near stoichiometric and highly transparent CdS:Mo thin films by a low‐cost improved SILAR technique

Contact Info

Product

Resources

About