The thermovoltaic effect in zinc oxide inhomogeneously doped with mixed-valence impurities

Пронин, И. А.; Averin, I. A.; Bozhinov, A. S.; Georgieva, Angelina; Dimitrov, Dimitar; Карманов, А. А.; Moshnikov, V. A.; Papazova, K. I.; Теруков, Е. И.; Yakushova, N. D.

doi:10.1134/s1063785015100132

Cited by 23 publications

(7 citation statements)

References 11 publications

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“…According to X-ray absorption spectroscopy, there is Cu + (main), Cu 2+ and Fe 3+ (main), Fe 2+ states, respectively, in ZnO-Cu and ZnO-Fe samples (the details of the zone diagram are presented in [8]). During the heating of the ZnO/ZnO-Me system, the concentration of charge carriers in the layers will be increased due to both ionization of the main forms of impurities in the material, and the ionization of its own point electrically active defects, first of all, oxygen vacancies, while its value will be larger in the upper layer because of the presence of electrically active impurities.…”

Section: Resultsmentioning

confidence: 99%

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Development of a Physical Model of Thermovoltaic Effects in the Thin Films of Zinc Oxide Doped with Transition Metals

et al. 2018

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A model of the thermovoltaic effect emergence in ZnO/ZnO (Me = Cu, Fe), sandwich structures has been developed in the article. The samples were made by the sol-gel method. When they were uniformly heated in a laboratory furnace in the temperature range of 200–300 °C, there an electromotive force (EMF) of −7~10 mV, not associated with the Seebeck effect, emerged. The developed physical mechanisms of the effect emergence consist of the following well-known fact: iron and copper coexist in zinc oxide in two states, namely, Fe2+ and Fe3+ (donor), and Cu2+ and Cu+ (acceptor). During the heating of the ZnO/ZnO–Me system, the concentration of charge carriers in the layers will increase, while in the upper layer its value will be larger because of the presence of electrically active impurities. At room temperatures, Coulomb forces retain an electron that is located on the Fe2+ ion, as well as a hole on Cu2+ ion, and the main states undergo ionization. However, as the temperature increases, the carrier concentration can reach a critical level, when they can screen the ion charge (the Debye screening radius decreases to the Bohr radius of the impurity). In this case, an abrupt collective endothermic process of ionization of multivalent impurities takes place, accompanied by the appearance of a concentration gradient of free carriers in the sample, and accordingly, the emergence of an electromotive force. Quantitative calculations of the critical temperature, at which the onset of EMF generation is observed, performed within the framework of the developed models.

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Section: Resultsmentioning

confidence: 99%

“…The authors of this paper first discovered the SVG in ZnO/ZnO-Me homojunctions (Me-Fe,Cu) [8,9]. To explain this effect, the Mott insulators theory has been applied.…”

Section: Introductionmentioning

confidence: 99%

Development of a Physical Model of Thermovoltaic Effects in the Thin Films of Zinc Oxide Doped with Transition Metals

et al. 2018

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“…The conversion of thermal energy into electrical energy by environmentally friendly methods is an urgent task. The effects of the occurrence of an electromotive force (EMF) discovered over the past decades during uniform heating (without an external temperature gradient) of various semiconductor materials based on samarium monosulfide 𝑆𝑚𝑆 [1][2][3], zinc oxide 𝑍𝑛𝑂 [4], solid solution 𝑆𝑚 1−𝑥 𝐺𝑑 𝑥 𝑆 [5], heterostructures 𝑆𝑚𝑆/𝑆𝑖𝐶 [6], lead telluride 𝑃𝑏𝑇𝑒 [7] are an alternative to thermoelectricity and photovoltaics. A similar effect for completely different materials has been observed in recent years by scientists from the Physical-Technical Institute of the Uzbekistan Academy of Sciences.…”

Section: Introductionmentioning

confidence: 99%

Influence of the varizonal Si_1-xGe_x solid solution composition on the thermovoltaic effect in n – Si – p – Si_(1-x)Ge_x structure

Saidov

Usmonov²,

Karshiev³

et al. 2022

IOP Conf. Ser.: Earth Environ. Sci.

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The dependence of the thermogenerated electromotive force and current in a varizonal continuous Si 1-x Gex (0 ≤ x ≤ 1) solid solution on the content of germanium in it under uniform heating has been studied. The samples were the heterostructures of the n − Si − p − Si 1−x Gex (0 ≤ x ≤ 1) type base obtained by the liquid-phase epitaxy. In the temperature range 30-250°C with homogeneous heating in the heterostructures, an electromotive force of 0.3 mV and a current of 3.5 nA were generated, and after carrying out the oblique strip of the epitaxial film, the heterostructures generated - the electromotive force 1.6 mV & current 16 nA.

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“…In this structure, the generation of electromotive force resulted directly from the artificial creation of a gradient of excess samarium ions in a parallelepipedal SmS polycrystalline sample. Subsequently, thermovoltaic effect was discovered in other materials -SmS-based heterostructures [3], ZnO-based compositions [4,5] as well as Si-and Ge-based structures [6].…”

Section: Introductionmentioning

confidence: 99%

Thermovoltaic Effect in a Multilayer Junction Structure with an Oxide Insulation Barrier

Turkiewicz¹,

Prociów²,

Dziedzic³

2020

ACTA POLYTECH HUNG

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The thermovoltaic effect in zinc oxide inhomogeneously doped with mixed-valence impurities

Cited by 23 publications

References 11 publications

Development of a Physical Model of Thermovoltaic Effects in the Thin Films of Zinc Oxide Doped with Transition Metals

Development of a Physical Model of Thermovoltaic Effects in the Thin Films of Zinc Oxide Doped with Transition Metals

Influence of the varizonal Si_1-xGe_x solid solution composition on the thermovoltaic effect in n – Si – p – Si_(1-x)Ge_x structure

Thermovoltaic Effect in a Multilayer Junction Structure with an Oxide Insulation Barrier

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The thermovoltaic effect in zinc oxide inhomogeneously doped with mixed-valence impurities

Cited by 23 publications

References 11 publications

Development of a Physical Model of Thermovoltaic Effects in the Thin Films of Zinc Oxide Doped with Transition Metals

Development of a Physical Model of Thermovoltaic Effects in the Thin Films of Zinc Oxide Doped with Transition Metals

Influence of the varizonal Si1-xGex solid solution composition on the thermovoltaic effect in n – Si – p – Si(1-x)Gex structure

Thermovoltaic Effect in a Multilayer Junction Structure with an Oxide Insulation Barrier

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Influence of the varizonal Si_1-xGe_x solid solution composition on the thermovoltaic effect in n – Si – p – Si_(1-x)Ge_x structure