2017
DOI: 10.5505/pajes.2016.23911
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The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

Abstract: The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device Al/Si3N4/p-Si aygıtının C-V characteristikleri üzerine metal ile yarıiletken kontak arasındaki yalıtkan tabakanın kalınlık etkisi

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Cited by 4 publications
(2 citation statements)
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“…The outlet boundary conditions were set at 100% outflow. The simulation ran for 1400 iterations, and the residuals converged to straight lines [31,32]. The inlet and outlet mass flow rates for the solid and the air are shown in Table 2.…”
Section: Simulation Analysismentioning
confidence: 99%
See 1 more Smart Citation
“…The outlet boundary conditions were set at 100% outflow. The simulation ran for 1400 iterations, and the residuals converged to straight lines [31,32]. The inlet and outlet mass flow rates for the solid and the air are shown in Table 2.…”
Section: Simulation Analysismentioning
confidence: 99%
“…Dilute phase flow measurement in terms of variations in capacitance is hard to trace. Hence, the air is removed, and the densely concentrated sample as a fraction of actual flow is measured, which affords substantial variations in capacitance values as solid particles flow through it [31]. This observable sensor section of the channel is not physically in direct contact with the rest of the system.…”
Section: Measurement Systemmentioning
confidence: 99%