The third route to the formation of the Si–O–Si-group and siloxane structures. To siloxanes through silanones

Воронков, М. Г.

doi:10.1016/s0022-328x(97)00742-0

Cited by 42 publications

(36 citation statements)

References 73 publications

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“…When they were heated at 600 C the characterisation of the solid residues by 31 P MAS NMR spectroscopy shows°C a broad peak at 0 ppm typical of phosphoric acid. However, the analysis of the evolved gases for Si-containing resins resulted similar to the above described but moreover 1,3,5-triphenyl-1,3,5-trimethylcyclotrisiloxane was detected [30].…”

Section: Resultssupporting

confidence: 66%

Development of flame retardant phosphorus- and silicon-containing polybenzoxazines

Spontón

Ronda

Galià

et al. 2009

Polymer Degradation and Stability

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Section: Resultssupporting

confidence: 66%

Development of flame retardant phosphorus- and silicon-containing polybenzoxazines

Spontón

Ronda

Galià

et al. 2009

Polymer Degradation and Stability

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“…This finding is in accordance with Klages et al It is expected that reactions of these excited argon atoms and the excimer

{A r}_{2} [^{3} Σ_{normalu}^{prefix+}, v = 0]

with the trimethylsiloxy radical are the main sources for the generation of dimethylsilanone (CH 3 ) 2 SiO by breaking one Si–C bond and generating a methyl radical CH 3 in addition. Dimethylsilanone is known for its tendency to insert easily into various chemical bonds, such as Si–O–Si groups, and to cyclo‐oligomerize . Thus, the insertion of dimethylsilanone into Si–O–Si moieties of a plasma polymer film is a plausible reaction for the formation of PDMS films …”

Section: Temporal Evolution Of Dbds In Ar–hmdso Mixturesmentioning

confidence: 99%

Impact of hexamethyldisiloxane admixtures on the discharge characteristics of a dielectric barrier discharge in argon for thin film deposition

Loffhagen

Becker

Czerny

et al. 2017

Contributions to Plasma Physics

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Atmospheric‐pressure dielectric barrier discharges (DBDs) in argon with admixtures of small amounts of hexamethyldisiloxane (HMDSO) have been analysed by means of numerical modelling. A time‐dependent, spatially one‐dimensional fluid‐Poisson model has been used, which takes into account the spatial variation of the discharge plasma between the plane‐parallel dielectrics covering the electrodes. Main features of the model, including the reaction kinetics for HMDSO, are given. Good agreement with related experimental studies of the ignition voltage for HMDSO amounts of up to 200 ppm and the temporal course of the discharge current for conditions typical of deposition experiments is obtained by the model calculations when assuming that 30% of the reactions of HMDSO with excited argon atoms, with a rate coefficient of 5.0 × 10−10 cm3/s, lead to the production of electrons due to Penning ionization. The modelling results for constant frequency f = 86.2 kHz and applied voltage Ua = 4 kV show that the electrical energy dissipated in the DBD decreases with an increasing amount of HMDSO and enable the determination of the energy absorbed per HMDSO molecule on the basis of their energy balance. The analysis of the plasma–chemical processes also makes clear that collision processes of HMDSO with excited argon atoms and molecules leading to neutral reaction products are essential for the formation of thin polymer films.

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“…This moiety may react further with other V 3 D 3 rings or undergo a termination reaction with a siloxane or fluorocarbon radical. Another possible reaction pathway for the formation of T-groups is the decomposition of the six-membered V 3 D 3 ring into three vinylmethylsilanone molecules, 12 followed by a reaction between the silanone molecules and vinyl-abstracted siloxane groups.…”

Section: The 29mentioning

confidence: 99%

Effect of filament temperature on the chemical vapor deposition of fluorocarbon–organosilicon copolymers

Murthy

Olsen

Gleason

2003

J of Applied Polymer Sci

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ABSTRACT:The effect of filament temperature on the hot-filament chemical vapor deposition (HFCVD) of fluorocarbon-organosilicon copolymer thin films from 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V 3 D 3 ) and perfluorooctane sulfonyl fluoride (PFOSF) was examined. Significant changes in chemical structure occur as the filament temperature is varied, and these changes give rise to differences in thermal and mechanical properties. When the filament temperature is low, the films consist primarily of carbon-backbone polymer chains with siloxane ring pendant groups. When higher filament temperatures are used, the film structure consists of siloxane-backbone chains with some degree of crosslinking. Films produced with low filament temperatures have a greater degree of thermal stability and flexibility than those produced with high filament temperatures.

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The third route to the formation of the Si–O–Si-group and siloxane structures. To siloxanes through silanones

Cited by 42 publications

References 73 publications

Development of flame retardant phosphorus- and silicon-containing polybenzoxazines

Development of flame retardant phosphorus- and silicon-containing polybenzoxazines

Impact of hexamethyldisiloxane admixtures on the discharge characteristics of a dielectric barrier discharge in argon for thin film deposition

Effect of filament temperature on the chemical vapor deposition of fluorocarbon–organosilicon copolymers

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