Isape2012 2012
DOI: 10.1109/isape.2012.6408990
|View full text |Cite
|
Sign up to set email alerts
|

The THz emission properties of GaAs photoconductive antenna with strong electric fields

Abstract: The terahertz (THz) emission properties of GaAs photoconductive antennas with strong electric fields are discussed; the transient transport characteristics of non-equilibrium carriers (hot electrons) within the photoconductive antenna were comparatively analyzed. It is shown that there are significant differences in the average drift velocity variation with strong and weak electric field. In the initial phase, optical wave scattering is mainly caused by small-angle scattering, carriers are accelerated by balli… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
1
1

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 8 publications
0
2
0
Order By: Relevance
“…[26] The changes in the photoconductivity and current density mainly occur in the gap. [27] A yoz cross-section SΩ of the carrier concentration at the center of the gap between the metal electrodes is created to make the simulation more accurate and overcome an overestimation of the amplitude of the terahertz electric field. Once the semiconductor material is excited by an incident femtosecond laser pulse with higher energy than its bandgap, free electron-hole pairs will be generated in the semiconductor material.…”
Section: Terahertz Detection Pca Modelsmentioning
confidence: 99%
“…[26] The changes in the photoconductivity and current density mainly occur in the gap. [27] A yoz cross-section SΩ of the carrier concentration at the center of the gap between the metal electrodes is created to make the simulation more accurate and overcome an overestimation of the amplitude of the terahertz electric field. Once the semiconductor material is excited by an incident femtosecond laser pulse with higher energy than its bandgap, free electron-hole pairs will be generated in the semiconductor material.…”
Section: Terahertz Detection Pca Modelsmentioning
confidence: 99%
“…In Figure 1, the generation process of THz radiation in the PCA can be described as follows: A femtosecond laser pulse illuminates a spot in the gap between two electrodes, 18 when the photon energy of the incident femtosecond laser pulse is higher than the band gap of the semiconductor material, electron-hole pairs will be generated inside the material. Under the action of the applied bias voltage, the photoexcited carriers will be driven along the direction of the electric field to form transient current, 19 which contributes to the radiation of THz waves in the PCA.…”
Section: Physical Model and Theoretical Formulationmentioning
confidence: 99%