The transformation of digital to analog resistance switching behavior in Bi₂FeCrO₆ thin films

Abstract

Bi 2 FeCrO 6 (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two types of the resistive switching behaviors, it is found that the digital resistive behavior conductance mechanism is a bulk-limited conduction, and the analog resistive switching behavior is accompanied with rectification effects and negative differential resistance behaviors, which are considered as interface-limited conductivity behaviors. So the change of digital and analog resistive switching behaviors may be result of the transformation of conductive mechanism. These research results will help us to design and manufacture digital and analog multifunctional resistive switching memory devices.

New-Style Logic Operation and Neuromorphic Computing Enabled by Optoelectronic Artificial Synapses in an MXene/Y:HfO2 Ferroelectric Memristor

“…The energy band barrier model is suitable for elucidating this simulated resistive behavior, as shown in Figure 3f−h. 38 The work function of FTO is very close to that of HfO 2 , and both exhibit semiconductor properties. The potential barrier height between the two layers is relatively low, minimizing the need for electron flow to overcome excessively high barriers.…”

“…It was observed in Figure c that during the simulated resistive behavior the positive voltage remains below 3 V and does not induce CF fracture. The energy band barrier model is suitable for elucidating this simulated resistive behavior, as shown in Figure f–h . The work function of FTO is very close to that of HfO 2 , and both exhibit semiconductor properties.…”

Achieving adjustable digital-to-analog conversion in memristors with embedded Cs2AgSbBr6 nanoparticles

“…8 Therefore, it is important for the memristor devices to achieve the conversion from digital-type to analog-type in a simple way. 9 Several attempts have been made to obtain the conversion. Li et al reported that the digital-to-analog conversion in TaO x -based devices was achieved by changing the top electrode materials.…”