The transparent pn junction of CuI/SnO2/ZnO core-shell orderly nanoarrays towards photovoltaic conversion enhancement

CuI/BaSnO3 Quantum Dot/ZnSnO3 Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

“…The charge carrier behaviors can be demonstrated through Mott−Schottky plots 19,62 Here, CuI is the p-type, and perovskite BaSnO 3 QD and ZnSnO 3 are the n-type (Figure 8a−c). 19,56 The corresponding Fermi levels (corrected by Ag/AgCl vs NHE) were 0.387 (VB-CuI), −0.349 (CB-BaSnO 3 QD), and −0.303 (CB-ZnSnO 3 ) V. After the formation of the CuI/BaSnO 3 QD/ZnSnO 3 p−n junction (Figure 8d), the Fermi levels (vs NHE) were regulated to 0.375 (VB-CuI), 0.126 (CB-BaSnO 3 QD), and 0.342 (CB-ZnSnO 3 ) V. Correspondingly, the CB of CuI was −2.625 V, the VB of BaSnO 3 QD and ZnSnO 3 were 3.912 and 4.303 V, respectively (vs NHE). This implies that E CB-CuI < E CB-BaSnOd 3 < E CB-ZnSnOd 3 and E VB-CuI < E VB-BaSnOd 3 < E VB-ZnSnOd 3 .…”

“…29−34 The synergistic effects of appropriate Fermi level, high QY of homologous perovskite BaSnO 3 QD, and p-type carrier induced by Cu vacancies enable the achievement of a favorable kinetic equilibrium for high PCE. 4,[28][29][30]56 Therefore, by modifying with the dual-functional homologous perovskite BaSnO 3 QD, the CuI/BaSnO 3 QD/ZnSnO 3 obtains a decent balance between PCE and transparency. [29][30][31][32][33]62 Additionally, the excellent physical−chemical stability of inorganic perovskite BaSnO 3 QD and ZnSnO 3 contributes to the overall stability.…”

“…CuI/ZSO-BSO-2 exhibited a photovoltaic enhancement of ∼2.6 × 10 3 folds, with a slight decrease in transparency of ∼5–7%. This indicates that the regulation of carrier behavior by the homologous perovskite BaSnO 3 QD’s transition layer is more important than simple absorption. − The homologous perovskite BaSnO 3 QD at the interface of CuI/ZnSnO 3 act as a ladder to promote the transfer of photo-generated carriers while maintaining decent transparency and increasing carrier injection through their high QY. , Additionally, Cu vacancies induce hole-related carriers, optimizing the intrinsic defects. − The synergistic effects of appropriate Fermi level, high QY of homologous perovskite BaSnO 3 QD, and p-type carrier induced by Cu vacancies enable the achievement of a favorable kinetic equilibrium for high PCE. ,− , Therefore, by modifying with the dual-functional homologous perovskite BaSnO 3 QD, the CuI/BaSnO 3 QD/ZnSnO 3 obtains a decent balance between PCE and transparency. − , Additionally, the excellent physical–chemical stability of inorganic perovskite BaSnO 3 QD and ZnSnO 3 contributes to the overall stability. − ,− …”