The trend of synthesized 2D materials toward artificial intelligence: Memory technology and neuromorphic computing

Naqi, Muhammad; Cho, Yongin; Bala, Arindam; Kim, Sunkook

doi:10.1016/j.mtelec.2023.100052

Cited by 6 publications

(1 citation statement)

References 93 publications

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“…In recent past, the use of transition metal dichalcogenides (TMDs) has emerged as a promising technology for developing advanced sensors owing to their unique optical and electrical properties including high carrier mobility, tunable bandgap, and strong light-matter interactions. [1][2][3][4][5] One of the potential applications of TMD-based sensors is visible and infrared photodetection systems in vehicles, computer vision, drones, biomedical imaging, and security surveillance. [6][7][8][9][10] The conventional visible and infrared photodetection system relies on two different spectral range sensors, each optimizing for different lighting conditions.…”

Section: Introductionmentioning

confidence: 99%

Active pixel image sensor array for dual vision using large‐area bilayer WS₂

Bala,

Sritharan,

Liu

et al. 2024

InfoMat

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Transition metal dichalcogenides (TMDs) are a promising candidate for developing advanced sensors, particularly for day and night vision systems in vehicles, drones, and security surveillance. While traditional systems rely on separate sensors for different lighting conditions, TMDs can absorb light across a broad‐spectrum range. In this study, a dual vision active pixel image sensor array based on bilayer WS2 phototransistors was implemented. The bilayer WS2 film was synthesized using a combined process of radio‐frequency sputtering and chemical vapor deposition. The WS2‐based thin‐film transistors (TFTs) exhibit high average mobility, excellent Ion/Ioff, and uniform electrical properties. The optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near‐infrared light with the highest responsivity of 1821 A W−1 (at a wavelength of 405 nm) owing to the photogating effect. Finally, red, green, blue, and near‐infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were demonstrated. The proposed image sensor array utilizing WS2 phototransistors has the potential to revolutionize the field of vision sensing, which could lead to a range of new opportunities in various applications, including night vision, pedestrian detection, various surveillance, and security systems.image

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Section: Introductionmentioning

confidence: 99%

Active pixel image sensor array for dual vision using large‐area bilayer WS₂

Bala,

Sritharan,

Liu

et al. 2024

InfoMat

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Augmented Optoelectronic Quantum Dot‐Enhanced Heterogeneous IGZO‐Te Photodiode for Artificial Synaptic Image Processing Applications

Dutta,

Naqi,

Cho

et al. 2024

Adv Funct Materials

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This study presents a novel photodiode technology with augmented optoelectronic capabilities through the incorporation of quantum dots (QDs). The photodiode, composed of Indium Gallium Zinc Oxide‐Tellurium (IGZO‐Te), is engineered for enhanced light sensitivity and tailored optoelectronic interactions. The primary application of this advanced photodiode lies in the domain of artificial intelligence and machine learning, where it plays a pivotal role in simulating synaptic connections for image processing tasks. Due to the exceptional optical and electrical properties of the IGZO‐Te‐QDs active material combination, the photodiode demonstrates consistent and dependable optical synaptic functions linked to learning. This is achieved through conduction modulation and time duration modulation of light stimulus. In addition, the opto‐synaptic functionalities such as short‐term and long‐term memory has also been successfully demonstrated not only on single device but also on 6 × 6 photodiodes array device. These findings underscore the significant potential of the hybrid structure of IGZO‐Te with QDs in optical artificial neuromorphic chips.

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WS₂ Nanotube Transistor for Photodetection and Optoelectronic Memory Applications

Pelella,

Kumar,

Intonti

et al. 2024

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Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi‐walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back‐gated field‐effect transistor. The device exhibits a p‐type behavior in ambient conditions, with a hole mobility µp ≈ 1.4 cm2V−1s−1 and a subthreshold swing SS ≈ 10 V dec−1. Current–voltage characterization at different temperatures reveals that the device presents two slightly different asymmetric Schottky barriers at drain and source contacts. Self‐powered photoconduction driven by the photovoltaic effect is demonstrated, and a photoresponsivity R ≈ 10 mAW−1 at 2 V drain bias and room temperature. Moreover, the transistor is tested for data storage applications. A two‐state memory is reported, where positive and negative gate pulses drive the switching between two different current states, separated by a window of 130%. Finally, gate and light pulses are combined to demonstrate an optoelectronic memory with four well‐separated states. The results herein presented are promising for data storage, Boolean logic, and neural network applications.

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The trend of synthesized 2D materials toward artificial intelligence: Memory technology and neuromorphic computing

Cited by 6 publications

References 93 publications

Active pixel image sensor array for dual vision using large‐area bilayer WS₂

Active pixel image sensor array for dual vision using large‐area bilayer WS₂

Augmented Optoelectronic Quantum Dot‐Enhanced Heterogeneous IGZO‐Te Photodiode for Artificial Synaptic Image Processing Applications

WS₂ Nanotube Transistor for Photodetection and Optoelectronic Memory Applications

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The trend of synthesized 2D materials toward artificial intelligence: Memory technology and neuromorphic computing

Cited by 6 publications

References 93 publications

Active pixel image sensor array for dual vision using large‐area bilayer WS2

Active pixel image sensor array for dual vision using large‐area bilayer WS2

Augmented Optoelectronic Quantum Dot‐Enhanced Heterogeneous IGZO‐Te Photodiode for Artificial Synaptic Image Processing Applications

WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications

Contact Info

Product

Resources

About

Active pixel image sensor array for dual vision using large‐area bilayer WS₂

Active pixel image sensor array for dual vision using large‐area bilayer WS₂

WS₂ Nanotube Transistor for Photodetection and Optoelectronic Memory Applications