2014
DOI: 10.1108/mi-01-2013-0001
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The tunnelling and electron injection reliabilities for FG transistors

Abstract: Purpose -The purpose of this paper was to present the results of the three types of FG transistors that were investigated.The reliability issues of oxide thickness due to programming, fabrication defects and process variation may cause leakage currents and thus charge retention failure in the floating gate (FG). Approach -The tunnelling and electron injection methods were applied to program FG devices of different length (180 and 350 nm) and coupling capacitor sizes. The drain current and threshold voltage cha… Show more

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Cited by 3 publications
(3 citation statements)
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“…A separate intelligence-fed digital subsystem would adjust internal parameters to mixed signal components and rapidly react to changes in system behavior. At hardware-level, this is demonstrated in [6], [7]. In both these articles, mixed-signal circuit behavior is influenced by external hardware or signal changes.…”
Section: A Contributionmentioning
confidence: 98%
“…A separate intelligence-fed digital subsystem would adjust internal parameters to mixed signal components and rapidly react to changes in system behavior. At hardware-level, this is demonstrated in [6], [7]. In both these articles, mixed-signal circuit behavior is influenced by external hardware or signal changes.…”
Section: A Contributionmentioning
confidence: 98%
“…A separate intelligence-fed digital subsystem would adjust internal parameters to mixed signal components and rapidly react to changes in system behavior. At hardware-level, this is demonstrated in [6] and [7]. In both these articles, mixed-signal circuit behavior is influenced by external hardware or signal changes.…”
Section: A Contributionmentioning
confidence: 98%
“…The SiGe technology with its high f T (Krithivasan et al , 2006) makes high performance mm-wave integrated circuits commercially viable, though there has been a growing interest in developing mm-wave integrated circuits at low cost in CMOS technology (Sandstrom et al , 2010). The IBM 8HP process is a 0.13 μm SiGe BiCMOS process (Mabuza and Sinha, 2013), which offers high performance SiGe HBTs with f t of 200 GHz. The process also offers modelled radio frequency (RF) passive devices for mm-wave designs, like the Lange coupler.…”
Section: Introductionmentioning
confidence: 99%