The ultra-thin AlN epitaxy on monolayer WS2 by helicon sputtering at 400 °C

Huang, Yu-Che; Hsieh, Tung-Chen; Hong, Tz-Ju; Wu, Chhi‐Chong; Ho, Yen Teng; Tsai, Yi-Wei; Lin, Jhih-Min; Kao, H. L.; Chang, Shan-Chwen

doi:10.1016/j.vacuum.2022.111681

Cited by 5 publications

(3 citation statements)

References 28 publications

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“…In contrast with graphene, 2D material TMDCs, such as WS 2 and MoS 2 , are known to be lattice-matched with GaN [ 86 – 89 ]. Research is also carried out to study the TMDCs-assisted nitrides vdW epitaxy [ 90 – 92 ]. Gupta et al try the nitrides growth on the Si/SiO 2 substrate with the assistance of the mechanical exfoliated WS 2 and MoS 2 interlayer, respectively [ 93 ].…”

Section: Modulation Mechanisms In 2d-material-assisted Epitaxymentioning

confidence: 99%

Lattice modulation strategies for 2D material assisted epitaxial growth

Chen,

Yang,

Liang

et al. 2023

Nano Convergence

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As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel optoelectronics and electronics development and opens a pathway for the next-generation integrated system fabrication. Studying and understanding the lattice modulation mechanism in 2D-material-assisted epitaxy could greatly benefit its practical application and further development. In this review, we overview the tremendous experimental and theoretical findings in varied 2D-material-assisted epitaxy. The lattice guidance mechanism and corresponding epitaxial relationship construction strategy in remote epitaxy, van der Waals epitaxy, and quasi van der Waals epitaxy are discussed, respectively. Besides, the possible application scenarios and future development directions of 2D-material-assisted epitaxy are also given. We believe the discussions and perspectives exhibited here could help to provide insight into the essence of the 2D-material-assisted epitaxy and motivate novel structure design and offer solutions to heterogeneous integration via the 2D-material-assisted epitaxy method. Graphical Abstract

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Section: Modulation Mechanisms In 2d-material-assisted Epitaxymentioning

confidence: 99%

Lattice modulation strategies for 2D material assisted epitaxial growth

Chen,

Yang,

Liang

et al. 2023

Nano Convergence

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“…Then, the subsequent AlN film formed on the layered AlN/ WS 2 switched to three-dimensional growth, exhibiting a highly c-axis oriented structure, high crystallinity, and larger grain size. 16 The attractiveness of III-nitride-based optoelectronic devices on Si substrates is attributed to the low cost and large wafer area, along with the potential for integrating them with other devices on the same platform. 17 However, the large difference in the thermal expansion coefficients and the lattice constant mismatch between Si and III-nitride compounds result in the cracking of III-nitride epitaxial layers.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Huang et al showed that layered 3 nm-thick AlN films form a 2D hexagonal lattice aligned with the WS 2 lattice via van der Waals epitaxy at the early stage of the AlN film growth. Then, the subsequent AlN film formed on the layered AlN/WS 2 switched to three-dimensional growth, exhibiting a highly c -axis oriented structure, high crystallinity, and larger grain size …”

Section: Introductionmentioning

confidence: 99%

Van der Waals Epitaxy Growth and Characterization of 7:7:8 Commensurate Heterointerfaces between h-AlN and Two-Dimensional WS₂/c-Al₂O₃

Chen,

Lee,

Chiu

et al. 2024

ACS Appl. Electron. Mater.

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In this study, hexagonal AlN (h-AlN) thin films were grown on a two-dimensional (2D)-WS 2 /Al 2 O 3 substrate by radio frequency−metalorganic molecular beam epitaxy at 800 °C. We examined the influence of various RF plasma powers on the synthesis and characterization of AlN/WS 2 heterostructures, as well as their properties, for optoelectronic applications. In-plane grazing incidence X-ray diffraction results indicated that the h-AlN thin films grown on 2D-WS 2 /Al 2 O 3 (0001) are oriented along (100) and ( 110) planes, indicating epitaxial growth with orientation relationships between AlN(101̅ 0)//WS 2 (101̅ 0)//Al 2 O 3 (112̅ 0) and AlN(112̅ 0)//WS 2 (112̅ 0)//Al 2 O 3 (112̅ 0). The full width at half-maximum values of the AlN thin film at 300 W of RF power were measured to be 260 and 1400 arcsec for (0002) and (101̅ 0) reflections, respectively. Transmission electron microscopy images show that the AlN (0002) films can grow epitaxially with the WS 2 /Al 2 O 3 substrate and that the film structure is nearly stoichiometric in composition. In addition, the AlN film was measured to be approximately 50 nm thick. The AlN surface corresponds to the (0002) plane of AlN, and a direct measurement based on the lattice image yielded a lattice parameter of c = 4.98 Å. Additionally, the high-resolution cross-sectional transmission electron microscopy images show that the 50 nm-thick AlN film on WS 2 has relaxed lattice parameters and is a layered structure with an in-plane lattice match aligned with the underlying WS 2 lattice. This is evidence of domain-matching epitaxy with an atomic ratio of 7:7:8, demonstrating a commensurate match among AlN, WS 2 , and Al 2 O 3 . These results will have a significant impact on the heteroepitaxy of high-quality thin AlN films with a WS 2 buffer and will facilitate the preparation of nitride-based optoelectronic devices at low growth temperatures.

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Trends and prospects of 2-D tungsten disulphide (WS2) hybrid nanosystems for environmental and biomedical applications

Uthappa,

Nehra,

Kumar

et al. 2023

Advances in Colloid and Interface Science

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The ultra-thin AlN epitaxy on monolayer WS2 by helicon sputtering at 400 °C

Cited by 5 publications

References 28 publications

Lattice modulation strategies for 2D material assisted epitaxial growth

Lattice modulation strategies for 2D material assisted epitaxial growth

Van der Waals Epitaxy Growth and Characterization of 7:7:8 Commensurate Heterointerfaces between h-AlN and Two-Dimensional WS₂/c-Al₂O₃

Trends and prospects of 2-D tungsten disulphide (WS2) hybrid nanosystems for environmental and biomedical applications

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The ultra-thin AlN epitaxy on monolayer WS2 by helicon sputtering at 400 °C

Cited by 5 publications

References 28 publications

Lattice modulation strategies for 2D material assisted epitaxial growth

Lattice modulation strategies for 2D material assisted epitaxial growth

Van der Waals Epitaxy Growth and Characterization of 7:7:8 Commensurate Heterointerfaces between h-AlN and Two-Dimensional WS2/c-Al2O3

Trends and prospects of 2-D tungsten disulphide (WS2) hybrid nanosystems for environmental and biomedical applications

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Van der Waals Epitaxy Growth and Characterization of 7:7:8 Commensurate Heterointerfaces between h-AlN and Two-Dimensional WS₂/c-Al₂O₃