The ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response

Abstract

We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering. Optical and structural properties of the thin films were characterized using various techniques. At 6 V bias, a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained, and this responsibility dropped quickly and reached the noise floor in the visible region. Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs. ultraviolet photodetector, ZnO:Al, photoconductive detector, ZnO

Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO

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