2023
DOI: 10.1007/s12274-023-6357-8
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The unique spontaneous polarization property and application of ferroelectric materials in photocatalysis

Jinghua An,
Chang Xu,
Lu Li
et al.
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Cited by 5 publications
(1 citation statement)
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“…Due to the unique atomic-level spontaneous symmetry breaking, ferroelectric materials have been widely investigated in various fields, such as ferroelectric memory, 1 ultrasonic transducers, 2 pressure sensors 3 and catalysts. 4 In recent years, ferroelectric semiconductors have demonstrated great potential in photocatalytic solar energy to hydrogen conversion, 5,6 where the built-in electric field in materials could facilitate the separation and transport of the photogenerated carriers and thus high photocatalytic capacities. The wide band gap ferroelectric photocatalysts explored exhibit excellent photocatalytic performance under UV light irradiation, such as PbTiO 3 , 7 BaTiO 3 , 8 Na 0.5 Bi 0.5 TiO 3 , 9 and Bi 3 TiNbO 9 , 10,11 among which, PbTiO 3 is regarded as one of the most promising photocatalysts because of its high built-in electric field (∼3.6 kV cm −1 ), adjustable micromorphology and band gap (∼2.8 eV).…”
mentioning
confidence: 99%
“…Due to the unique atomic-level spontaneous symmetry breaking, ferroelectric materials have been widely investigated in various fields, such as ferroelectric memory, 1 ultrasonic transducers, 2 pressure sensors 3 and catalysts. 4 In recent years, ferroelectric semiconductors have demonstrated great potential in photocatalytic solar energy to hydrogen conversion, 5,6 where the built-in electric field in materials could facilitate the separation and transport of the photogenerated carriers and thus high photocatalytic capacities. The wide band gap ferroelectric photocatalysts explored exhibit excellent photocatalytic performance under UV light irradiation, such as PbTiO 3 , 7 BaTiO 3 , 8 Na 0.5 Bi 0.5 TiO 3 , 9 and Bi 3 TiNbO 9 , 10,11 among which, PbTiO 3 is regarded as one of the most promising photocatalysts because of its high built-in electric field (∼3.6 kV cm −1 ), adjustable micromorphology and band gap (∼2.8 eV).…”
mentioning
confidence: 99%