2013
DOI: 10.1088/0964-1726/23/2/025004
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The unusual temperature dependence of the switching behavior in a ferroelectric single crystal with dislocations

Abstract: The unusual temperature-induced switching behavior in a ferroelectric single crystal with dislocation arrays is investigated by using phase field simulations. The results show that the influence of temperature on the hysteresis loop of a ferroelectric is dependent on the dislocation arrays. In the presence of dislocation arrays, the dependence of the coercive field on the temperature is different from that of a dislocation-free ferroelectric. The coercive field increases when the temperature increases from roo… Show more

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Cited by 18 publications
(7 citation statements)
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“…For example, the multiwell nature of the energy dictates that even if the system is driven towards minimum energy, it may only reach a local energy minimum. Defects, such as trapped charge [23], dislocations [24], dopant atoms [25] and so forth, also play a role, affecting both the energetics and kinetics [26]. Nevertheless, substantial progress in understanding domain patterns has been made by considering energy minimization in perfect crystals.…”
Section: Introductionmentioning
confidence: 99%
“…For example, the multiwell nature of the energy dictates that even if the system is driven towards minimum energy, it may only reach a local energy minimum. Defects, such as trapped charge [23], dislocations [24], dopant atoms [25] and so forth, also play a role, affecting both the energetics and kinetics [26]. Nevertheless, substantial progress in understanding domain patterns has been made by considering energy minimization in perfect crystals.…”
Section: Introductionmentioning
confidence: 99%
“…The domain configuration and polarization switching are a direct consequence of the minimization process of the total free energy over a whole simulated system, 42,43 which is a function of polarization, polarization gradient, strain and electric field. The domain configuration and polarization switching are a direct consequence of the minimization process of the total free energy over a whole simulated system, 42,43 which is a function of polarization, polarization gradient, strain and electric field.…”
Section: Methodsmentioning
confidence: 99%
“…Domain walls are borders between regions with different spontaneous polarization orientations. Such nucleation and pinning of ferroelectric domain walls at dislocations has been predicted in several simulations [5], leading to a change in ferroelectric and ferroelastic domain structure, polarization, and coercive field (electric field at which domains switch) [6]. Most of these predictions have been experimentally demonstrated only in thin films [7] or around indentations [8].…”
Section: Introductionmentioning
confidence: 92%