1984
DOI: 10.1063/1.333185
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The upper critical field of NbN films. II

Abstract: Previous measurements of upper critical fields near Tc on NbN films with a small column (∼80 Å) void (∼10 Å) microstructure showed a strong anisotropy for applied fields perpendicular and parallel to the film surface. The perpendicular critical field was the larger one. Extrapolation of the perpendicular field data to zero temperature indicated an Hc2(⊥,0)>500 kG. Low temperature pulsed field measurements have now been made which show Hc2(⊥,0)=443 kG. In contrast, the measured upper critical fields of N… Show more

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Cited by 39 publications
(13 citation statements)
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“…16 NbN also has a cubic structure, but with aϭ4.38 Å, and is a 17 K superconductor with a large upper critical field H c2 Ϸ25 T and a correspondingly short Ginsburg-Landau coherence length of 50 Å. 17 Note the considerable lattice mismatch of ϳ15% between the two materials.…”
mentioning
confidence: 99%
“…16 NbN also has a cubic structure, but with aϭ4.38 Å, and is a 17 K superconductor with a large upper critical field H c2 Ϸ25 T and a correspondingly short Ginsburg-Landau coherence length of 50 Å. 17 Note the considerable lattice mismatch of ϳ15% between the two materials.…”
mentioning
confidence: 99%
“…H c2// (T) and H c2 (T) can be different 18 . The NbN thin films have been reported to show anisotropic behavior also due to the grain morphology 19 . Thus, we prefer to employ an anisotropic GL (Ginzburg Landau) model to describe the behavior of H c2// (T) in our films, which in the 3D regime ( (T) < d s ) is given by 20,15 : It is interesting to note that the values of T C -T CR for pure NbN and FSB are 0.2 and 1 K respectively.…”
mentioning
confidence: 99%
“…However, junctions in which they were not observed also appeared by repeating the thermal cycle 4.2 to 300 K [12].) From this, we believe that the origin of the Lorentzian spectra exists in the MgO barrier or NbN/MgO interface and is not a defect in the NbN film (for example, a grain caused by a columnar void structure [13] of the NbN film in the neighborhood of the junction), which is the electrode material. We believe that the fact that these kinds of dependence differences in the power spectra of voltage noise appear when the barrier material is changed (AlN → MgO) is related to epitaxial growth, and this is profoundly important in the device fabrication process.…”
Section: Resultsmentioning
confidence: 84%