The use of a Gaussian doping distribution in the channel region to improve the performance of a tunneling carbon nanotube field-effect transistor

Naderi, Ali; Ghodrati, Maryam; Baniardalani, Sobhi

doi:10.1007/s10825-020-01445-1

Cited by 12 publications

(4 citation statements)

References 20 publications

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“…After determining the electrostatic potential U(x, y), it is entered into Eqn (1). the charge density Q, the electron charge e, and the device's permittivity P. Based on the tight-binding approach, the CNT's Hamiltonian matrix is determined by taking its immediate neighbours into account.…”

Section: Simentioning

confidence: 99%

“…Step1: Values are obtained for G(E), and U(x,y) from Eqn. (1,7,8,11). The initial values of and are taken from the Eqn.…”

Section: Thementioning

confidence: 99%

“…Gaussian doping is used in the channel region of the new tunnel CNTFET structure to boost the saturation current and cutoff frequency [1]. The doping-less CNTFET device is modelled to improve band-to-band tunnelling and the current ratio [2].…”

Section: Introductionmentioning

confidence: 99%

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Performance Analysis of Photovoltaic Effect on Tunneling Carbon Nano Tube Field Effect Transistor with Gaussian Doping

Rajamani,

Kavitha

2024

Preprint

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Technology advancement achieves high efficiency with low power. T-CNTFET with low power dissipation in high-speed applications is a suitable candidate for study. Due to the nanometer dimensions of CNTFETs, challenges such as the inability to achieve, reduced leakage current and sub-threshold swing, and increased transconductance and frequency cut are encountered. In addition, low ON current and ambipolar conduction are other drawbacks of conventional T-CNTFETs. Gaussian doping in the channel region of a newly developed design of tunneling carbon nanotube field effect transistor (T-CNTFET) is being evaluated for its performance. Doping is responsible for the short channel effect, increased ON current, and decreased cut-off frequency. There are three tiers of doping in effect. Doping is most concentrated at the drain and source ends of the channel and least concentrated in the central portion of the channel. Two-dimensional self-consistent Poisson and Schrodinger equations are used to model the apparatus. The differential method and the Green's function are used to resolve these equations. The simulation displays performance improvement in terms of transconductance, cutoff frequency, and sub-threshold swing when compared between existing and newly designed doped T-CNTFETs. Photo detectors are extensively used in many applications of communication systems.

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Section: Simentioning

confidence: 99%

“…Step1: Values are obtained for G(E), and U(x,y) from Eqn. (1,7,8,11). The initial values of and are taken from the Eqn.…”

Section: Thementioning

confidence: 99%

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Performance Analysis of Photovoltaic Effect on Tunneling Carbon Nano Tube Field Effect Transistor with Gaussian Doping

Rajamani,

Kavitha

2024

Preprint

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“…Significant studies related to the proposed model include the following. The Gaussian-doping distribution in the channel region of the tunnel CNTFET structure exhibits increased saturation current but decreased OFF-state current [1]. The implantation of halo doping at the source side and a lightly doped drain enhances the performance of the Silicon Nanotube Tunnel Field Effect Transistor (NT TFET) [2].…”

Section: Introductionmentioning

confidence: 99%

Semiconducting SWCNT Photo Detector for High Speed Switching Through Single Halo Doping

Arulmary¹,

Rajamani²,

Kavitha³

2023

Computer Systems Science and Engineering

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The method opted for accuracy, and no existing studies are based on this method. A design and characteristic survey of a new small band gap semiconducting Single Wall Carbon Nano Tube (SWCNT) Field Effect Transistor as a photodetector is carried out. In the proposed device, better performance is achieved by increasing the diameter and introducing a new single halo (SH) doping in the channel length of the CNTFET device. This paper is a study and analysis of the performance of a Carbon Nano Tube Field Effect Transistor (CNTFET) as a photodetector using the self-consistent Poisson and Green function method. The 2D self-consistent Poisson and Green's function method for various optical intensities and wavelength simulate this proposed photodetector. The performance study is based on the simulation of drain current, transconductance, sub-threshold swing, cut-off frequency, gain, directivity, and quantum efficiency under dark and illuminated conditions. These quantum simulation results show that cut-off frequency increases while there is an increase in diameter. The proposed SH-CNTFET provides better performance in terms of higher gain and directivity than conventional CNTFET (C-CNTFET). This device will be helpful in optoelectronic integrated circuits (OEIC) receivers due to its superior performance.

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Negative capacitance split source tunnel FET as dielectric modulated highly sensitive biosensor

Pathakamuri,

Pandey,

Ghosh

2024

Microsyst Technol

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The use of a Gaussian doping distribution in the channel region to improve the performance of a tunneling carbon nanotube field-effect transistor

Cited by 12 publications

References 20 publications

Performance Analysis of Photovoltaic Effect on Tunneling Carbon Nano Tube Field Effect Transistor with Gaussian Doping

Performance Analysis of Photovoltaic Effect on Tunneling Carbon Nano Tube Field Effect Transistor with Gaussian Doping

Semiconducting SWCNT Photo Detector for High Speed Switching Through Single Halo Doping

Negative capacitance split source tunnel FET as dielectric modulated highly sensitive biosensor

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