“…Then, we solved numerically the two nonlinear Equations and by using an explicit finite difference method, as previously proceeded, 11,12 with the condition of convergence, , where the time and radial steps (Δ t , Δ r ) are assumed appropriately to amount to ~10 −16 s and ~0.2 nm, respectively. Also, the boundary conditions (ambient temperatures) for the electronic and atomic subsystems in regions far from the ion path (i.e., for r → ∞) are assumed 42 to be T e = T a = 300 K. On the other hand, the specific heat and thermal conductivity are taken in the present work from the fit to their corresponding experimental and numerical values in case of SiO 2 thin films 43–50 with thicknesses close to that used in the present experiment. Indeed, the dependence of thermophysical properties on SiO 2 film thickness has been previously well investigated through several experimental and theoretical works 43–50 .…”