The use of amorphous Silicon flat panels as detector in neutron imaging

Lehmann, Eberhard; Vontobel, Peter

doi:10.1016/j.apradiso.2004.03.102

Cited by 15 publications

(4 citation statements)

References 2 publications

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“…See figure 10 0.7200 199.9 99.2745 6 detection, defined by the method through which their internal electric field is established; the merits and difficulties associated with each class are discussed below in the context of application. The charge-coupled device (CCD), although reported in the solid-state neutron detection literature [144,159,160] (not to be associated with scintillation-based CCD transduction [161,162]), is not included as its own class here due to its limitations in radiation hardness, temporal resolution and ability to detect over a continuous area [163]; however, some of the CCD limitations have recently been rectified with the charge injection device (CID) which may be worth further investigation [164]. For the detector class in which the internal electrical field is produced only by an external voltage (as shown schematically in figure 4(a)) the dielectric is a direct-conversion material that acts to both capture neutrons as well as transduce the primary capture reaction products.…”

Section: Norm (%)mentioning

confidence: 99%

The physics of solid-state neutron detector materials and geometries

Caruso

2010

J. Phys.: Condens. Matter

125

111

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Detection of neutrons, at high total efficiency, with greater resolution in kinetic energy, time and/or real-space position, is fundamental to the advance of subfields within nuclear medicine, high-energy physics, non-proliferation of special nuclear materials, astrophysics, structural biology and chemistry, magnetism and nuclear energy. Clever indirect-conversion geometries, interaction/transport calculations and modern processing methods for silicon and gallium arsenide allow for the realization of moderate- to high-efficiency neutron detectors as a result of low defect concentrations, tuned reaction product ranges, enhanced effective omnidirectional cross sections and reduced electron-hole pair recombination from more physically abrupt and electronically engineered interfaces. Conversely, semiconductors with high neutron cross sections and unique transduction mechanisms capable of achieving very high total efficiency are gaining greater recognition despite the relative immaturity of their growth, lithographic processing and electronic structure understanding. This review focuses on advances and challenges in charged-particle-based device geometries, materials and associated mechanisms for direct and indirect transduction of thermal to fast neutrons within the context of application. Calorimetry- and radioluminescence-based intermediate processes in the solid state are not included.

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Section: Norm (%)mentioning

confidence: 99%

The physics of solid-state neutron detector materials and geometries

Caruso

2010

J. Phys.: Condens. Matter

125

111

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“…As a result, the sensitivity of Gadox scintillators with 50µm and 110µm thickness was 0.59 and 1.01 GL/pixel/neutron respectively. And also the sensitivity of LiF/ZnS:Ag scintillator with 70µm thickness was 0.90 GL/pixel/neutron [8].…”

Section: Resultsmentioning

confidence: 97%

Use and imaging performance of CMOS flat panel imager with LiF/ZnS(Ag) and Gadox scintillation screens for neutron radiography

kim

Kim

et al. 2011

J. Inst.

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In digital neutron radiography system, a thermal neutron imaging detector based on neutron-sensitive scintillating screens with CMOS(complementary metal oxide semiconductor) flat panel imager is introduced for non-destructive testing (NDT) application. Recently, large area CMOS APS (active-pixel sensor) in conjunction with scintillation films has been widely used in many digital X-ray imaging applications. Instead of typical imaging detectors such as image plates, cooled-CCD cameras and amorphous silicon flat panel detectors in combination with scintillation screens, we tried to apply a scintillator-based CMOS APS to neutron imaging detection systems for high resolution neutron radiography. In this work, two major Gd 2 O 2 S:Tb and 6 LiF/ZnS:Ag scintillation screens with various thickness were fabricated by a screen printing method. These neutron converter screens consist of a dispersion of Gd 2 O 2 S:Tb and 6 LiF/ZnS:Ag scintillating particles in acrylic binder. These scintillating screens coupled-CMOS flat panel imager with 25x50mm 2 active area and 48µm pixel pitch was used for neutron radiography. Thermal neutron flux with 6x10 6 n/cm 2 /s was utilized at the NRF facility of HANARO in KAERI. The neutron imaging characterization of the used detector was investigated in terms of relative light output, linearity and spatial resolution in detail. The experimental results of scintillating screen-based CMOS flat panel detectors demonstrate possibility of high sensitive and high spatial resolution imaging in neutron radiography system.

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“…In most cases, however, scintillator screens in conjunction with either charge-coupled device (CCD) cameras or sometimes flat amorphous-Si detectors are utilized (see figure 4), both of which can be read out digitally. Amorphous-Si flat panels require shorter exposure times and provide faster continuous read-out [22][23][24][25], while state-of-the-art scintillator CCD combinations [4,26] are superior concerning dynamic range and signal-to-noise and so give improved image quality. Unlike amorphous silicon, CCD chips cannot be placed directly in a neutron beam, since they would suffer radiation damage.…”

Section: Detectionmentioning

confidence: 99%

Advances in neutron radiography and tomography

Ströbl

Manke

Kardjilov³

et al. 2009

J. Phys. D: Appl. Phys.

285

196

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Neutron imaging can provide two- or three-dimensional, spatially resolved images of the internal structure of bulk samples that are not accessible by other techniques, making it a unique tool with many potential applications. The method is now well established and is available at neutron sources worldwide. This review will give a survey of the technique of neutron imaging with a special focus on neutron tomography; the basics of the method as well as the technology of instrumentation will be outlined, and the techniques will be illustrated by representative applications. While the first part of the paper focuses on conventional attenuation contrast imaging, the second part reviews and critically assesses recent methodical developments.

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The use of amorphous Silicon flat panels as detector in neutron imaging

Cited by 15 publications

References 2 publications

The physics of solid-state neutron detector materials and geometries

The physics of solid-state neutron detector materials and geometries

Use and imaging performance of CMOS flat panel imager with LiF/ZnS(Ag) and Gadox scintillation screens for neutron radiography

Advances in neutron radiography and tomography

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