The use of anomalous x-ray diffraction as a tool for the analysis of compound semiconductors

Abstract

We provide a review about the current and previous use of anomalous diffraction of X-rays in the analysis of compound semiconductors. Among the large number of available techniques, those that have been used in successful experiments on this class of compounds are identified. An exhaustive overview of the compound semiconductor systems studied successfully is given and the kind of results derived in the experiments is discussed.

Anomalous X-ray diffraction from ω nanoparticles in β-Ti(Mo) single crystals

“…For instance, the method was applied for the determination of composition profiles in SiGe nano-islands (Schü lli et al, 2003;Magalhã es-Paniago et al, 2002;Malachias et al, 2003); it was also employed for studying various types of nanoparticles, such as CuInSi 2 in photovoltaic absorber materials (Connor et al, 2013), Pt and PtRu (Jeng et al, 2007) or PtCu nanoparticles (Strasser et al, 2010). Other materials studied by this approach include Heusler alloys (Ravel et al, 2002;Collins et al, 2007), semiconductors (Tö bbens & Schorr, 2017) and long-range ordering in ordered ternary alloys (Marty et al, 1990) and thin films (Maret et al, 2012). AXRD was also employed to identify phases in FeNi-based magnets (Sharma et al, 2018).…”