2010 IEEE International SOI Conference (SOI) 2010
DOI: 10.1109/soi.2010.5641056
|View full text |Cite
|
Sign up to set email alerts
|

The use of high resolution haze for control of SOI surface roughness in a volume production environment.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2012
2012
2023
2023

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 0 publications
0
1
0
Order By: Relevance
“…The dark field defect inspection method identifies and classifies defects by collecting scattered light caused by defects [3] . Due to the micro-roughness existing on the wafer surface, a small amount of scattered signal, called the haze signal, is formed [4] . Such signal is the prevalent underlying signal and is the main factor affecting the accuracy of the dark field defect inspection system [5] .…”
Section: Introductionmentioning
confidence: 99%
“…The dark field defect inspection method identifies and classifies defects by collecting scattered light caused by defects [3] . Due to the micro-roughness existing on the wafer surface, a small amount of scattered signal, called the haze signal, is formed [4] . Such signal is the prevalent underlying signal and is the main factor affecting the accuracy of the dark field defect inspection system [5] .…”
Section: Introductionmentioning
confidence: 99%