1966
DOI: 10.1109/t-ed.1966.15712
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The use of MOS structure for the design of high value resistors in monolithic integrated circuits

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Cited by 19 publications
(6 citation statements)
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“…3(a). The use of MOSFETs operating in the ohmic region instead of resistors is apparently the most simple option [14]. However, the intrinsic nonlinearity in the I-V characteristic leads to more elaborated alternatives for the cancellation of the nonlinear term [15], even to transconductorbased implementations [16].…”
Section: Mos-resistor Grid Designmentioning
confidence: 99%
“…3(a). The use of MOSFETs operating in the ohmic region instead of resistors is apparently the most simple option [14]. However, the intrinsic nonlinearity in the I-V characteristic leads to more elaborated alternatives for the cancellation of the nonlinear term [15], even to transconductorbased implementations [16].…”
Section: Mos-resistor Grid Designmentioning
confidence: 99%
“…The proposed SNR improvement system consists of a basic variable cut-off low-pass RC filter [1], [2], [3] with MOSFETs operated in the linear region of their current vs. voltage characteristics and so acting as variable resistors [4], [5]. Assuming the signal power is negligibly small at low frequencies, the noise level in the system can be obtained by low-pass filtering the noisy signal.…”
Section: Principle and Designmentioning
confidence: 99%
“…Alternative high ohm/square resistors are MOS resistors and cermet (ceramic-metal) thin-film resistors. Sheet resistances of 7 − 25 kΩ/square are obtained with good controllability by using non-saturated MOS transistors as resistors [3]. For example, the minimum-size MOS pull-up transistor considered in of Part I [1] has a sheet resistance of 9 kΩ/square.…”
Section: High-valued Resistorsmentioning
confidence: 99%