The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

Abstract

Theoretical investigation of generation-recombination processes in silicon, which has a lifetime of charge carriers 10 −3 s and capture cross sections of 10 −16 sm 2 . For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strongly depends on the frequency of exposure to the external variable deformation.

Temperature Dependence Of Energy States And Band Gap Broadening

“…As is known, when calculating integral (11), as a result of the change of variables, the integrand is transformed into a delta function, the effective density of states is transformed into…”

“…Using formula (23), one can calculate the density of energy states in a wide energy range, including the valence band, the forbidden band, and the conduction band. A feature of the model is the preservation of the temperature dependence of statistical functions, which help determine the contribution of thermal broadening to the spectrum of the density of energy states [11]. The proposed method allows one to determine discrete energy levels created by impurities with greater accuracy over a wide energy range.…”

“…Temperature Dependence Of Energy States And Band Gap Broadening 58 This expression does not take into account the temperature broadening of the energy levels. Formula (25) and (26) are obtained from (11) and (12) due to the property of the delta function. , where ( 7) and ( 19) become delta functions.…”

Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

“…For analysis of oscillatory processes, phase portraits (PhP) are used effectively, because they give the most complete picture of what is happening. In [4] using PhP the influence of frequency of variable deformation on the concentration of charge carriers in semiconductor illuminated by its forbidden zone's light, it is shown that the frequency of the variable deformation has a strong influence on the shape of the PhP. However, in [4] influence of recombination centers in the form of PhP is not investigated.…”

“…In [4] using PhP the influence of frequency of variable deformation on the concentration of charge carriers in semiconductor illuminated by its forbidden zone's light, it is shown that the frequency of the variable deformation has a strong influence on the shape of the PhP. However, in [4] influence of recombination centers in the form of PhP is not investigated. In this paper, we investigate influence of the change of recombination centers in the semiconductor by PhP.…”