The Use of Rutherford Backscattering to Study the Behavior of Ion-Implanted Atoms During Anodic Oxidation of Aluminum: Ar, Kr, Xe, K, Rb, Cs, Cl, Br, and l

Brown, F.; Mackintosh, William D.

doi:10.1149/1.2403637

Cited by 253 publications

(132 citation statements)

References 14 publications

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“…The transport number of cations in anodic Al 2 O 3 is 0.4 [27,28] and that in amorphous anodic ZrO 2 has been predicted to be 0.15 [9]. Assuming linear change in the transport number of cations with alloy composition [7], the transport number of cations of 0.21 is predicted for the anodic film on the Zr-26 at.% Al alloy.…”

Section: +mentioning

confidence: 94%

Formation and dielectric properties of anodic oxide films on Zr–Al alloys

Koyama

Aoki

Nagata

et al. 2010

J Solid State Electrochem

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Zr-Al alloys containing up to 26 at.% aluminum, prepared by magnetron sputtering, have been anodized in 0.1 mol dm -3 ammonium pentaborate electrolyte, and the structure and dielectric properties of the resultant anodic oxide films have been examined by grazing incidence X-ray diffraction, transmission electron microscopy, Rutherford backscattering spectroscopy and AC impedance spectroscopy. The anodic oxide film formed on zirconium consists of monoclinic and tetragonal ZrO 2 with the former being a major phase. Two-layered anodic oxide films, comprising an outer thin amorphous layer and an inner main layer of crystalline tetragonal ZrO 2 phase, are formed on the Zr-Al alloys containing 5 to 16 at.% aluminum. Further increase in the aluminum content to 26 at.% results in the formation of amorphous oxide layer throughout the thickness. The anodic oxide films becomes thin with increasing aluminum content, while the relative permittivity of anodic oxide shows a maximum at the aluminum content of 11 at.%. Due to major contribution of permittivity enhancement, the maximum capacitance of the anodic oxide films is obtained on the Zr-11 at.% Al alloy, being 1.7 times than on zirconium at the formation voltage of 100 V.

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Section: +mentioning

confidence: 94%

Formation and dielectric properties of anodic oxide films on Zr–Al alloys

Koyama

Aoki

Nagata

et al. 2010

J Solid State Electrochem

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“…Thus, it is concluded that radiation damage from ion implantation is a minor influence on the transport processes. The results of Brown and MacIntosh, 116 Skeldon et al, 96 and Shimizu et al 117 show that Cl − is mobile in an Al oxide film and that the Cl − moves toward the oxide/metal interface under an anodic potential.…”

Section: Chloride Mobility In the Oxidementioning

confidence: 98%

Chloride Ion Interactions with Oxide-Covered Aluminum Leading to Pitting Corrosion: A Review

Natishan

O’Grady

2014

J. Electrochem. Soc.

238

122

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Metals and alloys such as aluminum (Al), stainless steels, and nickel-based alloys exhibit corrosion resistance in a wide range of environments due to the presence of protective, passive oxides. However, in environments that contain aggressive anions such as chloride, Cl − , the passive film becomes unstable and degrades locally causing film breakdown and pitting corrosion. A number of theories describing the initiation of pitting corrosion have been postulated and discussed but to date there is no consensus on the mechanism of breakdown. Since all current mechanisms require Cl − interactions for oxide film breakdown in Cl − containing environments, the question is what is the nature of the interaction of aggressive anions such as Cl − with the passive film, adsorption and/or absorption, leading to pitting? This communication focuses on the interaction of Cl − with the passive oxide film on pure aluminum by reviewing and summarizing the available experimental data concerning Cl − interactions. It should also be noted that the observations for Cl − interactions with Al reviewed and summarized herein might not be applicable to all metals and alloys. Technologically important metals and alloys such as aluminum (Al), stainless steels, and nickel-based alloys exhibit corrosion resistance in a wide range of environments due to the presence of protective, passive oxides.1-90 The passive oxides behave as kinetic barriers, which inhibit further oxidation of the underlying thermodynamically reactive metals. However, in environments that contain aggressive anions such as chloride, Cl − , the passive film becomes unstable and degrades locally causing film breakdown and localized corrosion, which in turn decreases the service life of the materials. The consequence of discrete oxide failure is localized corrosion, which occurs in the forms of crevice corrosion in occluded sites and metastable or stable pitting corrosion on open surfaces. It is generally agreed that localized corrosion occurs in two distinct steps: initiation and propagation.A number of theories describing the initiation of pitting corrosion have been postulated and discussed.

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“…Anodizing of aluminium under the present conditions is known to occur at an eciency approaching 100%, with ®lm growth proceeding at both the ®lm/ electrolyte and metal/®lm interfaces due to co-operative transport of Al 3+ and O 2À ions, respectively [9]. Boron species, which are immobile in the ®lm, are found throughout the thickness of material formed at the ®lm/electrolyte interface; this outer layer constitutes about 40% of the ®lm thickness [10].…”

Section: Discussionmentioning

confidence: 81%

Mobility of lithium ions in anodic alumina formed on an Al–Li alloy

et al. 2000

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The mobility of lithium species in the barrier anodic ®lm formed on an Al-3 at% Li alloy in ammonium pentaborate electrolyte has been determined from measurements of ®lm composition by glow discharge optical emission spectroscopy and elastic recoil detection analysis. The results reveal the presence of lithium species throughout the thickness of the anodic ®lm, with a reduced amount of lithium in the ®lm compared with that in the alloy. The level of reduction in lithium content indicates that lithium species migrate outward about eight times faster than Al 3+ ions. The lithium species are lost to the electrolyte on reaching the ®lm/electrolyte interface, leading to a slight loss in the eciency of ®lm growth. In contrast, aluminium species are retained within the ®lm, as revealed by the distribution of boron in the outer H40% of the ®lm thickness. Determination of hydrogen pro®les indicates insigni®cant amounts of hydrogen in the ®lm. #

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The Use of Rutherford Backscattering to Study the Behavior of Ion-Implanted Atoms During Anodic Oxidation of Aluminum: Ar, Kr, Xe, K, Rb, Cs, Cl, Br, and l

Cited by 253 publications

References 14 publications

Formation and dielectric properties of anodic oxide films on Zr–Al alloys

Formation and dielectric properties of anodic oxide films on Zr–Al alloys

Chloride Ion Interactions with Oxide-Covered Aluminum Leading to Pitting Corrosion: A Review

Mobility of lithium ions in anodic alumina formed on an Al–Li alloy

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