2002
DOI: 10.1149/1.1420927
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The Use of Spark Ablation to Produce Calcium Phosphate Films on Silicon

Abstract: A method for fabrication of calcium phosphate films on crystalline silicon substrates which employs a high energy dc spark on silicon surfaces in the presence of Ca 10 ͑PO 4 ͒ 6 ͑OH͒ 2 is described. Such a process kinetically traps the desired calcium phosphate on the substrate with concomitant formation of a porous layer. Scanning electron micrographs of the silicon substrate show a nanoporous surface morphology for those areas exposed to spark processing. Energy dispersive X-ray analysis and infrared vibrati… Show more

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Cited by 4 publications
(10 citation statements)
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“…At that the surface is very rough and the surface morphology consists of "cauliflower" shaped clusters with large holes regularly penetrating the Si surface. 287 Pulse frequency and applied voltage are only two of the many processing parameters that influence the spark-processing time and the PL intensity. Other processing parameters include either the environment in which the sparking is conducted or the wafer temperature.…”
Section: Spark Processingmentioning
confidence: 99%
“…At that the surface is very rough and the surface morphology consists of "cauliflower" shaped clusters with large holes regularly penetrating the Si surface. 287 Pulse frequency and applied voltage are only two of the many processing parameters that influence the spark-processing time and the PL intensity. Other processing parameters include either the environment in which the sparking is conducted or the wafer temperature.…”
Section: Spark Processingmentioning
confidence: 99%
“…Previous investigations from our laboratories established that the major factors controlling film growth in this process are the spark electrode gap distance and duration of the ablation event [10]. Films ranging in 10 2 nm to ~10 µm were initially reported [10]. By the repetitive ablation and re-application of calcium phosphate slurry to the silicon surface, we find that it is now possible to form films as thick as 20 µm by this technique.…”
Section: Surface Modificationmentioning
confidence: 68%
“…Previous investigations from our laboratories established that the major factors controlling film growth in this process are the spark electrode gap distance and duration of the ablation event [10]. Films ranging in 10 2 nm to ~10 µm were initially reported [10].…”
Section: Surface Modificationmentioning
confidence: 99%
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“…The resulting product is a grayish layer (see Figure 10.24). At that, the surface is very rough and the surface morphology consists of "cauliflower" shaped clusters with large holes regularly penetrating the Si surface (Weis et al 2002).…”
Section: Spark Processingmentioning
confidence: 99%