1978
DOI: 10.1109/t-ed.1978.19099
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The use of submicrometer electron-beam lithography for fabricating 4-kbit CCD memory arrays

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Cited by 12 publications
(1 citation statement)
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“…
The semiconductor industry has pioneered the field of lithographic patterning over the last few decades to the point where it is possible to produce patterned features with sub-micrometer resolution consistently and reproducibly. With the advent of techniques such as electron-and ion-beam lithography, [1][2][3][4] scanning tunneling microscope lithography, [5,6] and dip-pen nanolithography, [7,8] it is even possible to achieve resolutions on the order of tens of nanometers. Although the utility of lithographic methods has been well demonstrated, they require expensive state-of-the-art facilities and trained technicians.
…”
mentioning
confidence: 99%
“…
The semiconductor industry has pioneered the field of lithographic patterning over the last few decades to the point where it is possible to produce patterned features with sub-micrometer resolution consistently and reproducibly. With the advent of techniques such as electron-and ion-beam lithography, [1][2][3][4] scanning tunneling microscope lithography, [5,6] and dip-pen nanolithography, [7,8] it is even possible to achieve resolutions on the order of tens of nanometers. Although the utility of lithographic methods has been well demonstrated, they require expensive state-of-the-art facilities and trained technicians.
…”
mentioning
confidence: 99%