The use of time resolved aerosol assisted chemical vapour deposition in mapping metal oxide thin film growth and fine tuning functional properties

Chadwick, Nick; Sathasivam, Sanjayan; Bawaked, Salem M.; Mokhtar, Mohamed; Al‐Thabaiti, Shaeel Ahmed; Basahel, Sulaiman N.; Parkin, Ivan P.; Carmalt, Claire J.

doi:10.1039/c4ta05922k

Cited by 5 publications

(6 citation statements)

References 37 publications

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“…260 This method allowed the functional properties of the films to be tracked as a function of time. As it is a solution-based technique, films with a range of compositions can be deposited, even if volatile precursors are not available.…”

Section: Discussionmentioning

confidence: 99%

Solution based CVD of main group materials

2016

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This critical review focuses on the solution based chemical vapour deposition (CVD) of main group materials with particular emphasis on their current and potential applications. Deposition of thin films of main group materials, such as metal oxides, sulfides and arsenides, have been researched owing to the array of applications which utilise them including solar cells, transparent conducting oxides (TCOs) and window coatings. Solution based CVD processes, such as aerosol-assisted (AA)CVD have been developed due to their scalability and to overcome the requirement of suitably volatile precursors as the technique relies on the solubility rather than volatility of precursors which vastly extends the range of potentially applicable compounds. An introduction into the applications and precursor requirements of main group materials will be presented first followed by a detailed discussion of their deposition reviewed according to this application. The challenges and prospects for further enabling research in terms of emerging main group materials will be discussed.

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Section: Discussionmentioning

confidence: 99%

Solution based CVD of main group materials

2016

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“…[11][12][13][14][15][16][17][18] The former includes the control of secondary properties through, for example, film preferred orientation to minimise charge carrier obstacles and tune morphology so as to best suit the optical scattering needs of an application. [4][5][6][31][32][33][34][35][36][37][38] Both the uniformity of the precursor mixture and small size distribution of aerosol particles results in a highly uniform thin film, although the longer deposition times required due to the slower aerosol delivery rate limit its ability to be easily engineered into a glass production line. 19 Since the physical properties of a polycrystalline thin film generally depend on its crystallographic features, especially crystallographic orientation and grain size, 20 the optimisation of surface texture, which can be controlled by the use and variation of nucleating seed layers, is commercially important for fully utilising these strongly anisotropic properties.…”

Section: Introductionmentioning

confidence: 99%

“…; all required thin film components are present at the desired ratios in a precursor mixture) to a heated substrate in the form of an aerosol and has been used for a variety of materials syntheses. [4][5][6][31][32][33][34][35][36][37][38] Both the uniformity of the precursor mixture and small size distribution of aerosol particles results in a highly uniform thin film, although the longer deposition times required due to the slower aerosol delivery rate limit its ability to be easily engineered into a glass production line. Despite the variant delivery methods, both APCVD and AACVD involve vapourisation of the precursor chemicals immediately prior to deposition and thin film formation.…”

Section: Introductionmentioning

confidence: 99%

Influencing FTO thin film growth with thin seeding layers: a route to microstructural modification

et al. 2015

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We report on the seeded growth of fluorine doped tin oxide (FTO) polycrystalline transparent conducting oxide (TCO) thin films on float glass using a novel two-step chemical vapour deposition (CVD) method. Aerosol-assisted CVD (AACVD) was used to grow a seed layer to direct and promote full film growth via an atmospheric pressure CVD (APCVD) overlay. The method allowed for reproducible control over morphology and denser, rougher, higher-performing TCO at a relatively low growth temperature (500 1C). Growth promotion depended on seeding time with an optimal seeding time being present, below which morphology control and conformal coverage was unavailable. The film properties and functional characteristics were characterised by SEM, AFM, XRD, XPS, UV-Vis-Near IR transmittancereflectance and Hall Effect probe measurements. Highly transparent and electrically conductive films, comparable to commercial materials and with high roughness and low transmission haze values indicate the process yields high quality films with a controllable morphology that can be tuned to desired application. The versatile method provides a route towards the morphological control of high-quality FTO thin films with high optical clarity and low-emissivity properties and can be readily extended to a variety of different substrates and metal oxide materials. Fig. 7 Illustrative F-1s XPS sputtered depth profile spectra representative of FTO films formed at various AACVD seed -APCVD overlay times (A), XPS calculated F-1s binding energy positions (B), fluorine dopant concentration (C) and illustrative Sn-3d surface scan (D).

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“…Thermal CVD also can be greatly improved by using time in a creative way. Recently a time-resolved thermal CVD route was presented where the substrate was partly covered by a shield which was removed in steps over time to uncover fresh substrate surface . This allowed the authors to study the evolution of a Sn–Ti–O film over time, revealing that a SnO 2 film initially forms and TiO 2 grows onto it, followed by Sn diffusion.…”

Section: Discussionmentioning

confidence: 99%

“…Recently a timeresolved thermal CVD route was presented where the substrate was partly covered by a shield which was removed in steps over time to uncover fresh substrate surface. 54 This allowed the authors to study the evolution of a Sn-Ti-O film over time, revealing that a SnO2 film initially forms and TiO2 grows onto it, followed by Sn diffusion. Another example is the self-seeding, catalyst-free growth of gallium oxide nanostructures, demonstrated by a time-resolved CVD process.…”

Section: Discussionmentioning

confidence: 99%

Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Deposition

Pedersen

2016

Chem. Mater.

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Thin films of inorganic materials are essential to several technologies we take for granted in our everyday lives. They form the basis of touch screens in smart phones and the electronic components in computers. Dating back more than a century, chemical vapor deposition (CVD) is one of the most common methods to form these films. In CVD, the atoms needed for the thin film are typically supplied by a continuous flow of gaseous precursor molecules and incorporated into the film by gas phase and surface chemical reactions. The continuous demand for more precise thin film fabrication on more complex shapes at lower temperatures sets a demand for more advanced CVD methods. The development of better designed precursor molecules is one important path to evolve CVD, the other path is to evolve the way in which we do CVD. In this perspective I will describe how using time as a fourth dimension in CVD can enable fabrication of new thin film materials and material structures at lower temperatures and on more complex substrate geometries by accessing new types of CVD chemistries available in time-resolved CVD.

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The use of time resolved aerosol assisted chemical vapour deposition in mapping metal oxide thin film growth and fine tuning functional properties

Abstract: Time resolved analysis of a thin film has allowed, for the first time, analysis of how thin film growth occurs and changes over time by aerosol assisted CVD.

Cited by 5 publications

References 37 publications

Solution based CVD of main group materials

Solution based CVD of main group materials

Influencing FTO thin film growth with thin seeding layers: a route to microstructural modification

Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Deposition

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