The use of titanium and titanium dioxide as masks for deep silicon etching

Powell, Oliver; Sweatman, Denis Russell; Harrison, H.B.

doi:10.1088/0964-1726/15/1/013

Cited by 12 publications

(9 citation statements)

References 18 publications

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“…One of the few CMOS compatible materials that are known to exhibit negative TOC values is titanium dioxide (TiO 2 ). Unlike polymer materials, TiO 2 is mechanically hard, chemically stable material [12], with fabrication-related properties similar to more established hafniumdioxide (HfO 2 ). TiO 2 has been successfully integrated in CMOS device design and fabrication process [13][14][15].…”

Section: Development Of Negative Toc Claddingmentioning

confidence: 99%

CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide

Djordjevic¹,

Shang²,

Guan³

et al. 2013

Opt. Express

116

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We present the design, fabrication and characterization of athermal nano-photonic silicon ring modulators. The athermalization method employs compensation of the silicon core thermo-optic contribution with that from the amorphous titanium dioxide (a-TiO(2)) overcladding with a negative thermo-optic coefficient. We developed a new CMOS-compatible fabrication process involving low temperature RF magnetron sputtering of high-density and low-loss a-TiO(2) that can withstand subsequent elevated-temperature CMOS processes. Silicon ring resonators with 275 nm wide rib waveguide clad with a-TiO(2) showed near complete athermalization and moderate optical losses. Small-signal testing of the micro-resonator modulators showed high extinction ratio and gigahertz bandwidth.

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Section: Development Of Negative Toc Claddingmentioning

confidence: 99%

CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide

Djordjevic¹,

Shang²,

Guan³

et al. 2013

Opt. Express

116

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“…These samples were annealed at 900 °C for 25 min in air. During the sintering the titanium reacts with the oxygen of the ambient air in the furnace to titanium oxide [10,11]. Table 1 shows the results of annealed B33 powder samples processed following the standard procedure in comparison with samples on which titanium was applied to the RIE silicon grass surface.…”

Section: Resultsmentioning

confidence: 99%

Wetting Behaviour of Glasses on Nanostructured Silicon Surfaces

Gropp¹,

Fischer²,

Dittrich³

et al. 2015

JEE

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Abstract:The behavior of molten glass on nanostructured silicon surface is of essential importance for the fabrication of a strong bond interface between glass (or glass-based ceramic tapes) and silicon. It was found that typical glasses do not wet the silicon surface that is always coated with a thin silica layer. It is shown that the high surface tension of molten glasses at high temperatures in combination with the dewetting surface of the structured silicon prohibits the formation of an interlocking bond between the two substrates. The theory of wetting can be applied to molten glasses, too. As a consequence, a similar solution as for liquids is investigated: the surface has to be chemically modified to become wettable. Investigations with sputtered metals on the nanostructured silicon improve wetting of the surface and result in a better bond homogeneity of the SiCer compound during sintering with low pressure.

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“…Using appropriate lithography parameters, the photoresist of width/length/space ͑2 m / 5 mm/ 2 m͒ was patterned along the Si͓010͔ direction. Due to difficulty in patterning and removing, 24 the TiO 2 mask is directly patterned by a liftoff process as follows. TiO 2 film with different thicknesses of 100, 200, and 300 nm was deposited on the patterned substrate by rf-magnetron sputtering at a base pressure of 5.0ϫ 10 −4 Pa.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of continuous V-grooves with Si(110) sidewalls using <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> resist mask by anisotropic wet etching

Zhang

Guo

et al. 2009

J. Micro/Nanolith. MEMS MOEMS

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Modification for substrate surface morphology is a kind of effective technique for controlling thin film growth orientation. In this work, continuous V-grooves are fabricated on monocrystalline Si͑100͒ substrate using TiO 2 resist mask by anisotropic wet etching. Influence of thickness of TiO 2 resist mask on etching patterns is investigated. The integrity and cross section of V-grooves are observed by laser scanning confocal microscope ͑LSCM͒ and scanning electronic microscopy ͑SEM͒, respectively. The floccules precipitating in V-grooves are verified by an energy dispersive spectrometer ͑EDS͒. Results indicate that the Si͑100͒ substrate surface is modified to the array of V-grooves along the Si͓010͔ direction with Si͑110͒ sidewalls. © 2009 Society of Photo-Optical Instrumentation Engineers.

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The use of titanium and titanium dioxide as masks for deep silicon etching

Cited by 12 publications

References 18 publications

CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide

CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide

Wetting Behaviour of Glasses on Nanostructured Silicon Surfaces

Fabrication of continuous V-grooves with Si(110) sidewalls using <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> resist mask by anisotropic wet etching

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