The use of unpatterned wafer inspection for immersion lithography defectivity studies

Holsteyns, Frank; Cheung, L.; Heuvel, Dieter Van den; Marcuccilli, Gino; Simpson, Gavin; Brun, Roland; Steinbach, Andy; Fyen, Wim; Vangoidsenhoven, Diziana; Mertens, Paul; Maenhoudt, Mireille

doi:10.1117/12.656728

Cited by 2 publications

(2 citation statements)

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“…There appears to be less defect on device #1 & #3 than device #2(a). Bubble, antibubble, blister, watermark (W/M), microbridging defect, non-visible, protrusion, blob, print particle, stain defect, dust, line deformation, and water droplet are several immersion lithography defects that have been studied by several authors [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. Out of these experiments, solutions like thicker topcoat, lower PAB, smaller filter pore size, longer developer time, longer rinse time, longer spin dry time, using Nikon Engineering Evaluation Tool (EET), using BF/3D DUV inspection tool, using Dark Field inspection SP2 tool UV laser light, using Defect source analysis (DSA), using Sokudo post developer rinse technique, improving material and rinse composition, using Advance Rinse Process (ADR) rinse process, optimizing rinse cycle time, using filtering system, using "on-the-fly" automatic defect classification (OTF-ADC), using surfactant rinsing, and pumping with filtration stability are all viable solution to further reduce defect at lithography step [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][23][24][25][26]…”

Section: Transferable Defectsmentioning

confidence: 99%

Defects reduction at BEOL interconnect within 300mm manufacturing environment

Lee

Wei²,

Kelling

et al. 2012

SPIE Proceedings

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Process yield is a critical factor for a success of 300mm manufacturing. Typically, higher yield corresponds to lower defect counts within the respective processing steps (lithography, etch, plating, and CMP). Within BEOL lithographic processes, there are issues of defects within same lithographic technology and there are concerns of defects between the generation of lithographic technologies, for example, immersion, 193nm "dry", and DUV (248nm). In order to have an effective defect reduction strategy, defects have to be monitored, identified, and analyzed for points of origins. In this paper, we explore three areas of interests in the BEOL: 1) defects occur between different processing steps, specifically, after Immersion Lithography, after Reactive Ion Etch (RIE), and after Chemical Mechanical Polish (CMP), 2) defects after CMP between lithographic technologies (Immersion, Dry, and DUV), and finally 3) defects between different devices. We were able to find evidence of transferable processing defects.

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Section: Transferable Defectsmentioning

confidence: 99%

Defects reduction at BEOL interconnect within 300mm manufacturing environment

Lee

Wei²,

Kelling

et al. 2012

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…Despite of the promising performance and sensitivity of the raster scan, the point scanning method is too slow to be applied to the large-size FPD manufacturing environment. The highsensitivity inspection, less than 100 nm defects, is enabled by ultraviolet (UV) incident light source [5] because the sensitivity of the light scattering inspection is enhanced by reducing the wavelength of the incident light; however, the UV source requires a high cost because it has to be replaced regularly and has safety issues, especially for open work environments. Therefore, it needs to develop an eco-friendly inspection system utilizing a visible light for the inspection application in LCD manufacturing environment while keeping the sub-micron sensitivity.…”

Section: Introductionmentioning

confidence: 99%