Although doping is
a cornerstone of the inorganic semiconductor
industry, most devices using organic semiconductors (OSCs) make use
of intrinsic (undoped) materials. Recent work on OSC doping has focused
on the use of dopants to modify a material’s physical properties,
such as solubility, in addition to electronic and optical properties.
However, if these effects are to be exploited in device manufacturing,
a method for dedoping organic semiconductors is required. Here, we
outline two chemical strategies for dedoping OSC films. In the first
strategy, we use an electron donor (a tertiary amine) to act as competitive
donor. This process is based on a thermodynamic equilibrium between
ionization of the donor and OSC and results in only partial dedoping.
In the second strategy, we use an electron donor that subsequently
reacts with the p-type dopant to create a nondoping product molecule.
Primary and secondary amines undergo a rapid addition reaction with
the dopant molecule 2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane
(F4TCNQ), with primary amines undergoing a further reaction eliminating
HCN. Under optimized conditions, films of semiconducting polymer poly(3-hexylthiophene)
(P3HT) dedoped with 1-propylamine (PA) reach as-cast fluorescence
intensities within 5 s of exposure to the amine, eventually reaching
140% of the as-cast values. Field-effect mobilities similarly recover
after dedoping. Quantitative fluorescence recovery is possible even
in highly fluorescent polymers such as PFB, which are expected to
be much more sensitive to residual dopants. Interestingly, treatment
of undoped films with PA also yields increased fluorescence intensity
and a reduction in conductivity of at least 2 orders of magnitude.
These results indicate that the process quantitatively removes not
only F4TCNQ but also intrinsic p-type impurities present in as-cast
films. The dedoping strategies outlined in this article are generally
applicable to other p- and n-type molecular dopants in OSC films.