The valuable role of renucleation rate in ultrananocrystalline diamond growth

Barbosa, Divani C.; Hammer, Peter; Trava-Airoldi, V.J.; Corat, Evaldo José

doi:10.1016/j.diamond.2012.01.028

Cited by 23 publications

(25 citation statements)

References 45 publications

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“…Extensive research has been conducted on the polycrystalline growth of NCD on various materials such as NaCl and Silicon 9 , 10 ; however, there is little in reported literature in regards to spatially localized NCD growth on SCD substrates. Typically in heteroepitaxial MPCVD NCD growth processes, it is required that the substrate be prepared by seeding its surface with nanocrystalline diamond crystallites that act as growth catalysts for the NCD film 11 , 12 . This is achieved by sonicating the substrate in a colloidal nanodiamond solution, whereby nanocrystalline particles attach to the substrate surface and in turn act as initial growth sites.…”

Section: Introductionmentioning

confidence: 99%

“…In polycrystalline films grown by seeding techniques, the final NCD film is highly dependent on the initial distribution of the attached nano-seeds to the substrate. In order to achieve thick and smooth NCD films, plasma conditions and CVD growth parameters must be altered to promote greater re-nucleation by disrupting grain growth which reduces the crystallite size 11 – 14 . Films grown with high re-nucleation rates that yield smaller grain sizes (<10 nm) are referred to as ultrananocrystalline, and these films’ final grain size is no longer influenced by the overall thickness of the grown film.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Rapid Growth of Nanocrystalline Diamond on Single Crystal Diamond for Studies on Materials under Extreme Conditions

Moore

Samudrala

Catledge

et al. 2018

Sci Rep

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Early stage nucleation morphologies of spatially localized nanocrystalline diamond (NCD) micro-anvils grown on (100)-oriented single crystal diamond (SCD) anvil surfaces were analyzed and investigated for applications in high pressure studies on materials. NCD was grown on SCD using Microwave Plasma Chemical Vapor Deposition (MPCVD) for brief time intervals ranging from 1–15 minutes. Early stage film morphologies were characterized using scanning electron microscopy (SEM) and Raman spectroscopy and were compared to films grown for several hours. Rapid nucleation and growth of NCD on SCD is demonstrated without any pre-growth seeding of the substrate surface. As grown NCD diamond micro-anvils on SCD were used to generate static pressure of 0.5 Terapascal (TPa) on a tungsten sample as measured by synchrotron x-ray diffraction in a diamond anvil cell. Atomic force microscopy (AFM) analysis after decompression from ultrahigh pressures showed that the detachment of the NCD stage occurred in the bulk of the SCD and not at the interface, suggesting significant adhesive bond strength between nanocrystalline and single crystal diamond.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Rapid Growth of Nanocrystalline Diamond on Single Crystal Diamond for Studies on Materials under Extreme Conditions

Moore

Samudrala

Catledge

et al. 2018

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Reactor pressure and the substrate temperature were kept at 4 kPa and 680°C, respectively, with a gas mixture composed of 80% Ar, 19% H 2 and 1% CH 4 in a total flow of 150 sccm. In general, UNCD has been deposited at Ar concentration above 90% [4,22,23], however, with 80% Ar, B-UNCD could be obtained on RVC matrix. The boron doping was performed by additional hydrogen line passing through a bubbler containing B 2 O 3 dissolved in methanol with B/C ratio of 30 000 ppm.…”

Section: Methodsmentioning

confidence: 98%

Influence of modified carbon substrate on boron doped ultrananocrystalline diamond deposition

Oishi

Silva

Botelho

et al. 2018

Mater. Res. Express

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Boron doped ultrananocrystalline diamond (B-UNCD) growth was studied on modified reticulated vitreous carbon (RVC) produced from poly(furfuryl alcohol) (PFA) resin with sodium hydroxide additions at two different heat treatment temperatures. The different amounts of NaOH in PFA (up to reaching pH values of around 3, 5, 7, and 9) aimed to neutralize the acid catalyst and to increase the PFA storage life. Besides, this procedure was responsible for increasing the oxygen content of RVC samples. Thus, the effect of carbon and oxygen coming from the substrates in addition to their different graphitization indexes on diamond morphology, grain size, preferential growth and boron doping level were investigated by FEG-SEM, x-ray diffraction and Raman spectroscopy. Therefore, B-UNCD films were successfully grown on RVC with pH values of 3, 5, 7, and 9 heat treated at 1000 and 1700°C. Nonetheless, the higher oxygen amount during B-UNCD growth for samples with pH 7 and 9 heat treated at 1000°C was responsible for the RVC surface etching and the decrease in the boron concentration of such samples. The cross section images showed that B-UNCD infiltrated at around 0.9 mm in depth of RVC samples while carbon nanowalls were observed mainly on RVC samples heat treated at 1000°C for all pH range studied.

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“…Our experiments call into question the idea that, under the growth conditions of a nanocrystalline film, renucleation occurs on the growth surfaces of any orientation [20]. On the {100} face of SC substrate, homoepitaxial growth in the step bunching regime occurs for a long (5 min) period of time (Figure 1c It is believed that renucleation processes dominate under low power density or high methane concentration [11].…”

Section: Diamond Deposition On Low-index Facets Of the Single Crystalmentioning

confidence: 99%

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

et al. 2017

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Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH 4 -H 2 -N 2 gas mixture with the high concentration (4%) of nitrogen is studied. A beveled SC diamond embraced with low-index {100}, {110}, {111}, {211}, and {311} faces was used as the substrate. Only the {100} face is found to sustain homoepitaxial growth at the present experimental parameters, while nanocrystalline diamond (NCD) films are produced on other planes. This observation is important for the choice of appropriate growth parameters, in particular, for the production of bi-layer or multilayer NCD-on-microcrystalline diamond (MCD) superhard coatings on tools when the deposition of continuous conformal NCD film on all facet is required. The development of the film morphology with growth time is examined with SEM. The structure of hillocks, with or without polycrystalline aggregates, that appear on {100} face is analyzed, and the stress field (up to 0.4 GPa) within the hillocks is evaluated based on high-resolution mapping of photoluminescence spectra of nitrogen-vacancy NV optical centers in the film.

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The valuable role of renucleation rate in ultrananocrystalline diamond growth

Cited by 23 publications

References 45 publications

Rapid Growth of Nanocrystalline Diamond on Single Crystal Diamond for Studies on Materials under Extreme Conditions

Rapid Growth of Nanocrystalline Diamond on Single Crystal Diamond for Studies on Materials under Extreme Conditions

Influence of modified carbon substrate on boron doped ultrananocrystalline diamond deposition

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

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