The Way of the Increasing Two Times the Efficiency of Silicon Solar Cell

Gulomov, Jasurbek; Алиев, Р.

doi:10.15330/pcss.22.4.756-760

Cited by 9 publications

(7 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the silicon solar cells absorb light in the visible spectrum range [8], luminescent materials [9] and quantum dots [10] are formed on the surface of the solar cell to extend absorption spectrum. In addition, with the introduction of metal nanoparticles into the n region of silicon solar cells, the photoelectric parameters were improved [11].…”

Section: Introductionmentioning

confidence: 99%

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Gulomov¹,

Accouche²,

Алиев³

et al. 2023

Computers, Materials &Amp; Continua

Self Cite

View full text Add to dashboard Cite

Today, it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells, at a lower cost. Therefore, the aim of this paper is to analyze CH 3 NH 3 PbI 3 and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells. CH 3 NH 3 PbI 3 and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor. We propose to combine these two materials since CH 3 NH 3 PbI 3 is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material. The photoelectric parameters of n-CH 3 NH 3 PbI 3 /p-Si, n-ZnO/p-Si, and n-Si/p-Si solar cells have been studied in the range of 20-200 nm of emitter layer thickness. It has been found that the short circuit current for CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20-100 nm. Additionally, when the emitter layer thickness is greater than 100 nm, the short circuit current of CH 3 NH 3 PbI 3 /p-Si exceeds that of n-ZnO/p-Si. The optimal emitter layer thickness for n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si was found equal to 80 nm. Using this value, the short-circuit current and the fill factor were estimated around 18.27 mA/cm 2 and 0.77 for n-CH 3 NH 3 PbI 3 /p-Si and 18.06 mA/cm 2 and 0.73 for n-ZnO/p-Si. Results show that the efficiency of n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes. These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.

show abstract

Section: Introductionmentioning

confidence: 99%

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Gulomov¹,

Accouche²,

Алиев³

et al. 2023

Computers, Materials &Amp; Continua

Self Cite

View full text Add to dashboard Cite

show abstract

“…According to the Shockley–Queisser limit, the maximum efficiency of silicon/perovskite tandem solar cells can reach 45% [ 18 ], whereas the efficiency of a multijunction tandem solar cell can even exceed 50% [ 19 ]. To improve the optical properties of a solar cell, and, hence, increase its efficiency, texturing method [ 20 ] and metal nanoparticles [ 21 ] are employed.…”

Section: Introductionmentioning

confidence: 99%

Geometric Optimization of Perovskite Solar Cells with Metal Oxide Charge Transport Layers

et al. 2022

Self Cite

View full text Add to dashboard Cite

Perovskite solar cells (PSCs) are a promising area of research among different new generations of photovoltaic technologies. Their manufacturing costs make them appealing in the PV industry compared to their alternatives. Although PSCs offer high efficiency in thin layers, they are still in the development phase. Hence, optimizing the thickness of each of their layers is a challenging research area. In this paper, we investigate the effect of the thickness of each layer on the photoelectric parameters of n-ZnO/p-CH3NH3PbI3/p-NiOx solar cell through various simulations. Using the Sol–Gel method, PSC structure can be formed in different thicknesses. Our aim is to identify a functional connection between those thicknesses and the optimum open-circuit voltage and short-circuit current. Simulation results show that the maximum efficiency is obtained using a perovskite layer thickness of 200 nm, an electronic transport layer (ETL) thickness of 60 nm, and a hole transport layer (HTL) thickness of 20 nm. Furthermore, the output power, fill factor, open-circuit voltage, and short-circuit current of this structure are 18.9 mW/cm2, 76.94%, 1.188 V, and 20.677 mA/cm2, respectively. The maximum open-circuit voltage achieved by a solar cell with perovskite, ETL and HTL layer thicknesses of (200 nm, 60 nm, and 60 nm) is 1.2 V. On the other hand, solar cells with the following thicknesses, 800 nm, 80 nm, and 40 nm, and 600 nm, 80 nm, and 80 nm, achieved a maximum short-circuit current density of 21.46 mA/cm2 and a fill factor of 83.35%. As a result, the maximum value of each of the photoelectric parameters is found in structures of different thicknesses. These encouraging results are another step further in the design and manufacturing journey of PSCs as a promising alternative to silicon PV.

show abstract

“…theory [6]. However, we can increase this upper limit to 42% by forming nanostructures on its surface [7].Furthermore, it has been discovered that adding platinum metal nanoparticles to the solar cells can double their efficiency [8].…”

Section: Introductionmentioning

confidence: 99%

Gold Nanoparticles Introduced ZnO/Perovskite/ Silicon Heterojunction Solar Cell

Gulomov

Accouche

2022

IEEE Access

Self Cite

View full text Add to dashboard Cite

Renewable energy sources like photovoltaics have the potential to mitigate the negative consequences of pollution and global warming. The solar sector has shown exponential growth and is quickly becoming a viable alternative to fossil fuels. Currently, the great majority of solar modules are composed of crystalline silicon. To make photovoltaics more competitive, affordability and efficiency are two of the most important elements. Metal nanoparticles can be introduced or a heterojunction can be made using appropriate materials to increase the absorption coefficient of a silicon-based solar cell, which boost the total efficiency of the solar module. Therefore, in this study, we used Sentaurus TCAD simulation to examine the effects of gold nanoparticles introduced with various sizes and periodicities on the photoelectric characteristics of ZnO/Si and Perovskite/Si solar cells. Accordingly, all of the photoelectric characteristics of the perovskite/Si solar cell have shown a clear sinusoidal connection with the nanoparticle periodicity. When the gold nanoparticle size changed from 6 nm to 9 nm, the period of the sinusoidal function changed to π. The photoelectric parameters of ZnO/Si solar cells changed in a sinusoidal pattern based on the nanoparticle's periodicity, but this was true only when the nanoparticles size was between 9 nm and 21 nm. According to the obtained results, the maximum values of short-circuit current, open circuit voltage and fill factor are 10.47 mA/cm 2 , 0.384 V, 71.06% for perovskite/Si and 10.52 mA/cm 2 , 0.306 V, 71.12% for ZnO/Si. The minimum current density of the perovskite/Si solar cell was identical when compared to the solar cell without nanoparticles. When a gold nanoparticle with a size of 6 nm was introduced into the ZnO/Si solar cell with a periodicity of 120 nm, the short circuit current decreased by a factor of 3.81 compared to the solar cell without the nanoparticle. It has been scientifically proven that Fano interference is responsible for the sinusoidal relationship between the short-circuit current of the solar cells and the periodicity of the nanoparticle.

show abstract

The Way of the Increasing Two Times the Efficiency of Silicon Solar Cell

Cited by 9 publications

References 13 publications

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Geometric Optimization of Perovskite Solar Cells with Metal Oxide Charge Transport Layers

Gold Nanoparticles Introduced ZnO/Perovskite/ Silicon Heterojunction Solar Cell

Contact Info

Product

Resources

About